IPP200N15N3 ISC | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark1 iscN-ChannelMOSFETTransistor IPP200N15N3,IIPP200N15N3
- FEATURES
- Staticdrain-source on-resistance: RDS(on)≤20mΩ
- Enhancementmode
- FastSwitching Speed
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- DESCRITION
- Idealforhigh frequency switching andsync. Rec.
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 150 V VGS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous 50 A IDM DrainCurrent-SinglePulsed 200 A PD TotalDissipation@TC=25℃ 150 W Tj Max.OperatingJunctionTemperature 175 ℃ Tstg StorageTemperature -55~175 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 1 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62 ℃/W
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark2 iscN-ChannelMOSFETTransistor IPP200N15N3,IIPP200N15N3 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID =1mA 150 V VGS(th) GateThresholdVoltage VDS=VGS;ID=90μA 2 4 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=50A 20 mΩ VGS=8V;ID=25A 20 mΩ IGSS Gate-SourceLeakageCurrent VGS=20V;VDS=0V 100 nA IDSS Drain-SourceLeakageCurrent VDS=120V;VGS=0V 1 μA VDS=120V;VGS=0V;Tj=125℃ 100 μA VSD Diodeforwardvoltage IF =50A;VGS =0V 1.2 V