IPP057N08N3 ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark1 iscN-ChannelMOSFETTransistor IPP057N08N3，IIPP057N08N3
- FEATURES
- Staticdrain-source on-resistance: RDS(on)≤5.4mΩ
- Enhancementmode
- FastSwitching Speed
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- DESCRITION
- reliabledeviceforuseina widevariety ofapplications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 80 V VGS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous 80 A IDM DrainCurrent-SinglePulsed 320 A PD TotalDissipation@TC=25℃ 150 W Tj Max.OperatingJunctionTemperature 175 ℃ Tstg StorageTemperature -55~175 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 1 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62 ℃/W
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark2 iscN-ChannelMOSFETTransistor IPP057N08N3，IIPP057N08N3 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID =1mA 80 V VGS(th) GateThresholdVoltage VDS=VGS;ID =90μA 2.0 3.5 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=80A 5.4 mΩ IGSS Gate-SourceLeakageCurrent VGS=20V;VDS=0V 0.1 μA IDSS Drain-SourceLeakage Current VDS=80V;VGS=0V 1 μA VSD Diodeforwardvoltage IF=80A,VGS =0V 1.2 V