IPP055N03L ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark1 iscN-ChannelMOSFETTransistor IPP055N03L，IIPP055N03L
- FEATURES
- Staticdrain-source on-resistance: RDS(on)≤5.5mΩ
- Enhancementmode:
- FastSwitching Speed
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- DESCRITION
- reliabledeviceforuseina widevariety ofapplications
- ABSOLUTEMAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 30 V VGS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous 50 A IDM DrainCurrent-SinglePulsed 350 A PD TotalDissipation@TC=25℃ 68 W Tj Max.OperatingJunctionTemperature 175 ℃ Tstg StorageTemperature -55~175 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 2.2 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62 ℃/W
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark2 iscN-ChannelMOSFETTransistor IPP055N03L，IIPP055N03L ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=1mA 30 V VGS(th) GateThresholdVoltage VDS=VGS;ID=250μA 1 2.2 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=30A 7.8 mΩ IGSS Gate-SourceLeakageCurrent VGS=20V，VDS=0V 0.1 μA IDSS Drain-SourceLeakage Current VDS=30V;VGS=0V 1 μA VSD Diodeforwardvoltage IF =30A,VGS =0V 1.1 V