IPP048N04N ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark1 iscN-ChannelMOSFETTransistor IPP048N04N，IIPP048N04N
- FEATURES
- Staticdrain-source on-resistance: RDS(on)≤4.8mΩ
- Enhancementmode
- FastSwitching Speed
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- DESCRITION
- reliabledeviceforuseina widevariety ofapplications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 40 V VGS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous 70 A IDM DrainCurrent-SinglePulsed 400 A PD TotalDissipation@TC=25℃ 79 W Tj Max.OperatingJunctionTemperature 175 ℃ Tstg StorageTemperature -55~175 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 1.9 ℃/W
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark2 iscN-ChannelMOSFETTransistor IPP048N04N，IIPP048N04N ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID =1mA 40 V VGS(th) GateThresholdVoltage VDS=VGS;ID =200μA 2.0 4.0 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=70A 4.8 mΩ IGSS Gate-SourceLeakageCurrent VGS=20V;VDS=0V 0.1 μA IDSS Drain-SourceLeakage Current VDS=40V;VGS=0V 1 μA VSD Diodeforwardvoltage IF=30A,VGS =0V 0.89 V