45N10N3G UMW | Alldatasheet

Document overview

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Technical content

Features

  • Verylowon-resistanceRDS(on)
  • 175°Coperatingtemperature
  • Pb-freeleadplating;RoHScompliant
  • Idealforhigh-frequencyswitchingandsynchronousrectification UMW R 45N10N3G

100 V N-Channel MOSFET

  • VDS
  • ID =137A
  • RDS(ON) (at VGS=10V) < 4.5mΩ 100V= Maximumratings atTA=25°C,unlessotherwisespecified Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current ID 137

105 A TC=25°C1)

TC=100°C Pulsed drain current1) ID,pulse 548 A TC=25°C Avalanche energy, single pulse EAS 340 mJ ID=100A,RGS=25Ω Gate source voltage VGS -20 20 V Power dissipation Ptot 214 W TC=25°C Operating and storage temperature Tj,Tstg -55 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 www.umw-ic.com 1 UTD Semiconductor Co.,Limited

Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC 0.7 K/W Thermal resistance, junction - ambient, minimal footprint RthJA 62 K/W Thermal resistance, junction - ambient, 6 cm2 cooling area2) RthJA 50 K/W Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 100 V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2 2.7 3.5 V VDS=VGS,ID=150µA Zero gate voltage drain current IDSS 0.1 100 µA VDS=100V,VGS=0V,Tj=25°C VDS=100V,VGS=0V,Tj=125°C Gate-source leakage current IGSS 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 3.9 4.7 4.5 7.7 mΩ VGS=10V,ID=100A VGS=6V,ID=50A Gate resistance RG 1.4 Ω Transconductance gfs 73 145 S |VDS|>2|ID|RDS(on)max,ID=100A 1) See Diagram 3 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. UMW R 45N10N3G www.umw-ic.com 2 UTD Semiconductor Co.,Limited

Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss 6320 8410 pF VGS=0V,VDS=50V,f=1MHz Output capacitance Coss 1210 1610 pF VGS=0V,VDS=50V,f=1MHz Reverse transfer capacitance Crss 41 pF VGS=0V,VDS=50V,f=1MHz Turn-on delay time td(on) 27 ns VDD=50V,VGS=10V,ID=50A, RG=1.6Ω Rise time tr 59 ns VDD=50V,VGS=10V,ID=50A, RG=1.6Ω Turn-off delay time td(off) 48 ns VDD=50V,VGS=10V,ID=50A, RG=1.6Ω Fall time tf 14 ns VDD=50V,VGS=10V,ID=50A, RG=1.6Ω Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs 30 39 nC VDD=50V,ID=100A,VGS=0to10V Gate to drain charge Qgd 16 nC VDD=50V,ID=100A,VGS=0to10V Switching charge Qsw 27 nC VDD=50V,ID=100A,VGS=0to10V Gate charge total Qg 88 117 nC VDD=50V,ID=100A,VGS=0to10V Gate plateau voltage Vplateau 4.7 V VDD=50V,ID=100A,VGS=0to10V Output charge Qoss 122 162 nC VDD=50V,VGS=0V Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continous forward current IS 137 A TC=25°C Diode pulse current IS,pulse 548 A TC=25°C Diode forward voltage VSD 1.0 1.2 V VGS=0V,IF=100A,Tj=25°C Reverse recovery time trr 68 ns VR=50V,IF=IS,diF/dt=100A/µs Reverse recovery charge Qrr 135 nC VR=50V,IF=IS,diF/dt=100A/µs UMW R 45N10N3G t www.umw-ic.com 3 UTD Semiconductor Co.,Limited

Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 150 200 100 150 200 250 Ptot=f(TC) Diagram2:Draincurrent TC[°C] ID[A] 100 125 150 175 200 100 120 140 ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea VDS[V] ID[A] 10-1 100 101 102 103 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-6 10-5 10-4 10-3 10-2 10-1 100 10-3 10-2 10-1 100 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tp);parameter:D=tp/T UMW R 45N10N3G 100 V N-Channel MOSFETwww.umw-ic.com 4 UTD Semiconductor Co.,Limited

Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 160 240 320 400 7.5 V 10 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.drain-sourceonresistance ID[A] RDS(on)[mΩ ] 100 150 4.5 V 5 V 6 V 7.5 V 10 V RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics VGS[V] ID[A] 100 150 200 175 °C 25 °C ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Diagram8:Typ.forwardtransconductance ID[A] gfs[S] 100 150 120 160 200 gfs=f(ID);Tj=25°C UMW R 45N10N3G 100 V N-Channel MOSFETwww.umw-ic.com 5 UTD Semiconductor Co.,Limited

Diagram9:Drain-sourceon-stateresistance Tj[°C] RDS(on)[mΩ ] -60 -20 100 140 180 98 % typ RDS(on)=f(Tj);ID=100A;VGS=10V Diagram10:Typ.gatethresholdvoltage Tj[°C] VGS(th)[V] -60 -20 100 140 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1500 µA 150 µA VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances VDS[V] C[pF] 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram12:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 2.0 100 101 102 103 25 °C 25 °C, max 175 °C 175 °C, max IF=f(VSD);parameter:Tj UMW R 45N10N3G 100 V N-Channel MOSFETwww.umw-ic.com 6 UTD Semiconductor Co.,Limited

Diagram13:Avalanchecharacteristics tAV[µs] IAS[A] 100 101 102 103 100 101 102 103 25 °C 100 °C 150 °C IAS=f(tAV);RGS=25Ω ;parameter:Tj(start) Diagram14:Typ.gatecharge Qgate[nC] VGS[V] 100 80 V 50 V 20 V VGS=f(Qgate);ID=100Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -60 -20 100 140 180 100 105 110 VBR(DSS)=f(Tj);ID=1mA Gate charge waveforms UMW R 45N10N3G www.umw-ic.com 7 UTD Semiconductor Co.,Limited

R 45N10N3G www.umw-ic.com 8 UTD Semiconductor Co.,Limited Package Mechanical Data TO-220 Symbol Dimensions （mm） Symbol Dimensions (mm) Symbol Dimensions (mm)

www.umw-ic.com 9 UTD Semiconductor Co.,Limited Marking Orderinginformation Order code Package Baseqty Deliverymode TO-220 1000 Tube and box UMW R 45N10N3G