IPP034NE7N3 ISC | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark1 iscN-ChannelMOSFETTransistor IPP034NE7N3，IIPP034NE7N3
- FEATURES
- Staticdrain-source on-resistance: RDS(on)≤3.4mΩ
- Enhancementmode
- FastSwitching Speed
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- DESCRITION
- reliabledeviceforuseina widevariety ofapplications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 75 V VGS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous 100 A IDM DrainCurrent-SinglePulsed 400 A PD TotalDissipation@TC=25℃ 214 W Tj Max.OperatingJunctionTemperature 175 ℃ Tstg StorageTemperature -55~175 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 0.7 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62 ℃/W
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark2 iscN-ChannelMOSFETTransistor IPP034NE7N3，IIPP034NE7N3 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID =1mA 75 V VGS(th) GateThresholdVoltage VDS=VGS;ID =155μA 2.3 3.8 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=100A 3.4 mΩ IGSS Gate-SourceLeakageCurrent VGS=20V;VDS=0V 0.1 μA IDSS Drain-SourceLeakage Current VDS=75V;VGS=0V 1.0 μA VSD Diodeforwardvoltage IF=100A,VGS =0V 1.2 V