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Technical content
Features
- Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss
- Best-in-classDPAKRDS(on)
- Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V
- IntegratedZenerDiodeESDprotection
- Fullyqualifiedacc.JEDECforIndustrialApplications
- Fullyoptimizedportfolio Benefits
- Best-in-classperformance
- Enablinghigherpowerdensitydesigns,BOMsavingsandlower assemblycosts
- Easytodriveandtoparallel
- BetterproductionyieldbyreducingESDrelatedfailures
- Lessproductionissuesandreducedfieldreturns
- Easytoselectrightpartsforfinetuningofdesigns Potentialapplications RecommendedforhardandsoftswitchingflybacktopologiesforLED Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand Industrialpower.AlsosuitableforPFCstageinConsumerapplications andSolar. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj=25°C 800 V RDS(on),max 2.0 Ω Qg,typ 9 nC ID 3 A Eoss @ 500V 0.85 µJ VGS(th),typ 3 V ESD class (HBM) 1C - Type/OrderingCode Package Marking RelatedLinks IPN80R2K0P7 PG-SOT223 80R2K0 see Appendix A
800VCoolMOSªP7PowerTransistor IPN80R2K0P7 Rev.2.1,2018-02-09Final Data Sheet TableofContents
800VCoolMOSªP7PowerTransistor IPN80R2K0P7 Rev.2.1,2018-02-09Final Data Sheet 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID
1.9 A TC=25°C
TC=100°C Pulsed drain current2) ID,pulse - - 6.0 A TC=25°C Avalanche energy, single pulse EAS - - 6 mJ ID=0.4A; VDD=50V Avalanche energy, repetitive EAR - - 0.05 mJ ID=0.4A; VDD=50V Avalanche current, repetitive IAR - - 0.4 A - MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0to400V Gate source voltage VGS -20 -30
30 V static;
AC (f>1 Hz) Power dissipation Ptot - - 6.4 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 150 °C - Continuous diode forward current IS - - 1.1 A TC=25°C Diode pulse current2) IS,pulse - - 6.0 A TC=25°C Reverse diode dv/dt3) dv/dt - - 1 V/ns VDS=0to400V,ISD<=0.47A,Tj=25°C Maximum diode commutation speed3) dif/dt - - 50 A/µs VDS=0to400V,ISD<=0.47A,Tj=25°C 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - solder point RthJS - - 19.5 °C/W - Thermal resistance, junction - ambient RthJA - - 160 °C/W Device on PCB, minimal footprint Thermal resistance, junction - ambient soldered on copper area RthJA - - 75 °C/W Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer 70µm thickness) copper area for drain connection and cooling. PCB is vertical without air stream cooling. Soldering temperature, wave- & reflow soldering allowed Tsold - - 260 °C reflow MSL1 1) DPAK equivalent. Limited by Tj max. Maximum duty cycle D=0.5 2) Pulse width tp limited by Tj,max 3)VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG;tcond<2µs
800VCoolMOSªP7PowerTransistor IPN80R2K0P7 Rev.2.1,2018-02-09Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 800 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2.5 3 3.5 V VDS=VGS,ID=0.05mA Zero gate voltage drain current IDSS - µA VDS=800V,VGS=0V,Tj=25°C VDS=800V,VGS=0V,Tj=150°C Gate-source leakage curent incl. zener diode IGSS - - 1 µA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 1.7 4.4 2.0 - Ω VGS=10V,ID=0.94A,Tj=25°C VGS=10V,ID=0.94A,Tj=150°C Gate resistance RG - 4.0 - Ω f=250kHz,opendrain Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 175 - pF VGS=0V,VDS=500V,f=250kHz Output capacitance Coss - 4.0 - pF VGS=0V,VDS=500V,f=250kHz Effective output capacitance, energy related1) Co(er) - 7 - pF VGS=0V,VDS=0to500V Effective output capacitance, time related2) Co(tr) - 61 - pF ID=constant,VGS=0V,VDS=0to500V Turn-on delay time td(on) - 10 - ns VDD=400V,VGS=13V,ID=0.94A, RG=33Ω Rise time tr - 8 - ns VDD=400V,VGS=13V,ID=0.94A, RG=33Ω Turn-off delay time td(off) - 40 - ns VDD=400V,VGS=13V,ID=0.94A, RG=33Ω Fall time tf - 20 - ns VDD=400V,VGS=13V,ID=0.94A, RG=33Ω Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 0.6 - nC VDD=640V,ID=0.94A,VGS=0to10V Gate to drain charge Qgd - 4 - nC VDD=640V,ID=0.94A,VGS=0to10V Gate charge total Qg - 9 - nC VDD=640V,ID=0.94A,VGS=0to10V Gate plateau voltage Vplateau - 4.5 - V VDD=640V,ID=0.94A,VGS=0to10V 1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to500V 2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to500V
800VCoolMOSªP7PowerTransistor IPN80R2K0P7 Rev.2.1,2018-02-09Final Data Sheet Table7Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 0.9 - V VGS=0V,IF=0.94A,Tf=25°C Reverse recovery time trr - 730 - ns VR=400V,IF=0.47A,diF/dt=50A/µs Reverse recovery charge Qrr - 3.0 - µC VR=400V,IF=0.47A,diF/dt=50A/µs Peak reverse recovery current Irrm - 7 - A VR=400V,IF=0.47A,diF/dt=50A/µs
800VCoolMOSªP7PowerTransistor IPN80R2K0P7 Rev.2.1,2018-02-09Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 Ptot=f(TC) Diagram2:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-4 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-4 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=80°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 100 101 102 10-1 100 101 102 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tP);parameter:D=tp/T
800VCoolMOSªP7PowerTransistor IPN80R2K0P7 Rev.2.1,2018-02-09Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.outputcharacteristics VDS[V] ID[A] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 5 V 5.5 V 6 V 6.5 V 7 V 10 V RDS(on)=f(ID);Tj=125°C;parameter:VGS Diagram8:Drain-sourceon-stateresistance Tj[°C] RDS(on)[Ω ] -50 -25 100 125 150 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6 5.0 5.4 typ 98% RDS(on)=f(Tj);ID=0.94A;VGS=10V
800VCoolMOSªP7PowerTransistor IPN80R2K0P7 Rev.2.1,2018-02-09Final Data Sheet Diagram9:Typ.transfercharacteristics VGS[V] ID[A] 25 °C 150 °C ID=f(VGS);VDS=20V;parameter:Tj Diagram10:Typ.gatecharge Qgate[nC] VGS[V] 640 V 120 V VGS=f(Qgate);ID=0.94Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 2.0 10-1 100 101 102 25 °C 125 °C IF=f(VSD);parameter:Tj Diagram12:Avalancheenergy Tj[°C] EAS[mJ] 100 125 150 EAS=f(Tj);ID=0.4A;VDD=50V
800VCoolMOSªP7PowerTransistor IPN80R2K0P7 Rev.2.1,2018-02-09Final Data Sheet Diagram13:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -75 -50 -25 100 125 150 175 700 750 800 850 900 950 VBR(DSS)=f(Tj);ID=1mA Diagram14:Typ.capacitances VDS[V] C[pF] 100 200 300 400 500 10-1 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 200 300 400 500 600 700 800 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Eoss=f(VDS)
800VCoolMOSªP7PowerTransistor IPN80R2K0P7 Rev.2.1,2018-02-09Final Data Sheet 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform VDS IF R g1 R g 2 R g1 = R g 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform VDS V(BR)DS ID VDS VDSID
800VCoolMOSªP7PowerTransistor IPN80R2K0P7 Rev.2.1,2018-02-09Final Data Sheet 6PackageOutlines 2.5 REVISION0124-02-2016ISSUE DATE EUROPEAN PROJECTION0SCALE 5mm 02.5 DOCUMENT NO.Z8B00180553MILLIMETERS 2.3 BASIC4.6 BASICe1ONL EE1eDbb2cA1A 6.303.306.70 1.522.950.240.60-DIMMIN 3.70 A2 1.70 0.751.103 1,50 Figure1OutlinePG-SOT223,dimensionsinmm-IndustrialGrade
800VCoolMOSªP7PowerTransistor IPN80R2K0P7 Rev.2.1,2018-02-09Final Data Sheet 7AppendixA Table11RelatedLinks
- IFXCoolMOSWebpage:www.infineon.com
- IFXDesigntools:www.infineon.com
800VCoolMOSªP7PowerTransistor IPN80R2K0P7 Rev.2.1,2018-02-09Final Data Sheet RevisionHistory IPN80R2K0P7 Revision:2018-02-09,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2017-06-23 Release of final version 2.1 2018-02-09 Corrected front page text TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.