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Technical content
Features
- Suitableforhardandsoftswitching(PFCandLLC)
- IntegratedGateResistortoenableexcellentbalancebetweenefficiency andeaseofuse
- RDS(on)*Abelow1Ohm*mm²,enableslowRDSON/package
- ESDdiodefrom180mOhmsandabove
- Seriesqualifiedforavarietyofindustrialandconsumergrade applicationsaccordingtoJEDEC(J-STD20andJESD22) Benefits
- IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe application
- Canbeinawidevarietyofapplicationsandpowerranges
- Increasedpowerdensitysolutionsduetosmallerpackages
- Protectioninvariousmanufacturingenvironments
- Productstailoredforeitherconsumerorindustrialapplications Potentialapplications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom andUPS. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 360 mΩ Qg.typ 13 nC ID,pulse 26 A Eoss@400V 1.6 µJ Body diode di/dt 900 A/µs Type/OrderingCode Package Marking RelatedLinks IPN60R360P7S PG-SOT223 60S360 see Appendix A
600VCoolMOSªP7PowerTransistor IPN60R360P7S Rev.2.0,2017-06-23Final Data Sheet TableofContents
600VCoolMOSªP7PowerTransistor IPN60R360P7S Rev.2.0,2017-06-23Final Data Sheet 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID
6.0 A TC=25°C
TC=100°C Pulsed drain current2) ID,pulse - - 26 A TC=25°C Avalanche energy, single pulse EAS - - 27 mJ ID=2.50A; VDD=50V; see table 10 Avalanche energy, repetitive EAR - - 0.14 mJ ID=2.50A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 2.50 A - MOSFET dv/dt ruggedness dv/dt - - 80 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 7 W TC=25°C Storage temperature Tstg -40 - 150 °C - Operating junction temperature Tj -40 - 150 °C - Mounting torque - - - n.a. Ncm n.a. Continuous diode forward current IS - - 9.0 A TC=25°C Diode pulse current2) IS,pulse - - 26 A TC=25°C Reverse diode dv/dt3) dv/dt - - 50 V/ns VDS=0...400V,ISD<=9A,Tj=25°C see table 8 Maximum diode commutation speed dif/dt - - 900 A/µs VDS=0...400V,ISD<=9A,Tj=25°C see table 8 Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min 1) Limited by Tj max. Maximum Duty Cycle D = 0.50; DPAK / IPAK equivalent. 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical Rg
600VCoolMOSªP7PowerTransistor IPN60R360P7S Rev.2.0,2017-06-23Final Data Sheet 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - solder point RthJS - - 17.4 °C/W - Thermal resistance, junction - ambient RthJA - - 160 °C/W device on PCB, minimal footprint Thermal resistance, junction - ambient for SMD version RthJA - 35 75 °C/W Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thickness) copper area for drain connection and cooling. PCB is vertical without air stream cooling. Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C reflow MSL1
600VCoolMOSªP7PowerTransistor IPN60R360P7S Rev.2.0,2017-06-23Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA Gate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=0.14mA Zero gate voltage drain current IDSS - µA VDS=600,VGS=0V,Tj=25°C VDS=600,VGS=0V,Tj=150°C Gate-source leakage current IGSS - - 1000 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.300 0.697 0.360 - Ω VGS=10V,ID=2.7A,Tj=25°C VGS=10V,ID=2.7A,Tj=150°C Gate resistance RG - 6.2 - Ω f=1MHz,opendrain Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 555 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 10 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related1) Co(er) - 20 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 214 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 8 - ns VDD=400V,VGS=13V,ID=2.7A, RG=10.0Ω ;seetable9 Rise time tr - 7 - ns VDD=400V,VGS=13V,ID=2.7A, RG=10.0Ω ;seetable9 Turn-off delay time td(off) - 42 - ns VDD=400V,VGS=13V,ID=2.7A, RG=10.0Ω ;seetable9 Fall time tf - 10 - ns VDD=400V,VGS=13V,ID=2.7A, RG=10.0Ω ;seetable9 Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 3 - nC VDD=400V,ID=2.7A,VGS=0to10V Gate to drain charge Qgd - 4 - nC VDD=400V,ID=2.7A,VGS=0to10V Gate charge total Qg - 13 - nC VDD=400V,ID=2.7A,VGS=0to10V Gate plateau voltage Vplateau - 5.2 - V VDD=400V,ID=2.7A,VGS=0to10V 1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V 2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
600VCoolMOSªP7PowerTransistor IPN60R360P7S Rev.2.0,2017-06-23Final Data Sheet Table7Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 0.9 - V VGS=0V,IF=2.7A,Tj=25°C Reverse recovery time trr - 145 - ns VR=400V,IF=1.0A,diF/dt=100A/µs; see table 8 Reverse recovery charge Qrr - 0.74 - µC VR=400V,IF=1.0A,diF/dt=100A/µs; see table 8 Peak reverse recovery current Irrm - 11 - A VR=400V,IF=1.0A,diF/dt=100A/µs; see table 8
600VCoolMOSªP7PowerTransistor IPN60R360P7S Rev.2.0,2017-06-23Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 Ptot=f(TC) Diagram2:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-5 10-4 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-5 10-4 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=80°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 100 101 10-2 10-1 100 101 102 0.5 0.2 0.1 0.05 single pulse 0.01 0.02 ZthJC=f(tP);parameter:D=tp/T
600VCoolMOSªP7PowerTransistor IPN60R360P7S Rev.2.0,2017-06-23Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 0.500 0.750 1.000 1.250 1.500 20 V 7 V 10 V 6.5 V 6 V 5.5 V RDS(on)=f(ID);Tj=125°C;parameter:VGS Diagram8:Drain-sourceon-stateresistance Tj[°C] RDS(on)[normalized] -50 -25 100 125 150 0.000 0.500 1.000 1.500 2.000 2.500 3.000 RDS(on)=f(Tj);ID=2.7A;VGS=10V
600VCoolMOSªP7PowerTransistor IPN60R360P7S Rev.2.0,2017-06-23Final Data Sheet Diagram9:Typ.transfercharacteristics VGS[V] ID[A] 150 °C 25 °C ID=f(VGS);VDS=20V;parameter:Tj Diagram10:Typ.gatecharge Qgate[nC] VGS[V] 120 V 400 V VGS=f(Qgate);ID=2.7Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10-1 100 101 102 125 °C 25 °C IF=f(VSD);parameter:Tj Diagram12:Avalancheenergy Tj[°C] EAS[mJ] 100 125 150 EAS=f(Tj);ID=2.5A;VDD=50V
600VCoolMOSªP7PowerTransistor IPN60R360P7S Rev.2.0,2017-06-23Final Data Sheet Diagram13:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -50 -25 100 125 150 540 550 560 570 580 590 600 610 620 630 640 650 660 670 680 690 VBR(DSS)=f(Tj);ID=1mA Diagram14:Typ.capacitances VDS[V] C[pF] 100 200 300 400 500 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 200 300 400 500 Eoss=f(VDS)
600VCoolMOSªP7PowerTransistor IPN60R360P7S Rev.2.0,2017-06-23Final Data Sheet 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform VDS IF R g1 R g 2 R g1 = R g 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform VDS V(BR)DS ID VDS VDSID
600VCoolMOSªP7PowerTransistor IPN60R360P7S Rev.2.0,2017-06-23Final Data Sheet 6PackageOutlines 2.5 REVISION0124-02-2016ISSUE DATE EUROPEAN PROJECTION0SCALE 5mm 02.5 DOCUMENT NO.Z8B00180553MILLIMETERS 2.3 BASIC4.6 BASICe1ONL EE1eDbb2cA1A 6.303.306.70 1.522.950.240.60-DIMMIN
0.181 BASIC
0.1300.264 0.0710.004MAXINCHESMINMAX 3.70 0.146 A2 1.70 0.067 0.751.100.030 3 3 1,50 0.059 0.043 Figure1OutlinePG-SOT223,dimensionsinmm/inches
600VCoolMOSªP7PowerTransistor IPN60R360P7S Rev.2.0,2017-06-23Final Data Sheet 7AppendixA Table11RelatedLinks
- IFXCoolMOSP7Webpage:www.infineon.com
- IFXCoolMOSP7applicationnote:www.infineon.com
- IFXCoolMOSP7simulationmodel:www.infineon.com
- IFXDesigntools:www.infineon.com
600VCoolMOSªP7PowerTransistor IPN60R360P7S Rev.2.0,2017-06-23Final Data Sheet RevisionHistory IPN60R360P7S Revision:2017-06-23,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2017-06-23 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2017InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.