IPP25N06S3-25 INFINEON | Alldatasheet

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Technical content

Features

  • N-channel - Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green package (lead free)
  • Ultra low Rds(on)
  • 100% Avalanche tested
  • ESD Class 1C (HBM) EIA/JESD22-A114-B Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current1) I D T C=25 °C, V GS=10 V 25 A T C=100 °C, V GS=10 V2) 23 Pulsed drain current2) I D,pulse T C=25 °C 100 Avalanche energy, single pulse3) E AS I D=12 A 60 mJ Drain gate voltage2) V DG 55 V Gate source voltage4) V GS ±20 V Power dissipation P tot T C=25 °C 48 W Operating and storage temperature T j, T stg -55 ... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56 Value V DS 55 V R DS(on),max (SMD version) 24.8 mΩ I D 25 A Product Summary PG-TO220-3-1 PG-TO262-3-1 PG-TO263-3-2 Type Package Ordering Code Marking IPB25N06S3-25 PG-TO263-3-2 SP0000-88000 3N0625 IPI25N06S3-25 PG-TO262-3-1 SP0000-87997 3N0625 IPP25N06S3-25 PG-TO220-3-1 SP0000-88001 3N0625 Rev. 1.0 page 1 2006-04-03

IPI25N06S3-25, IPP25N06S3-25 Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - 3.3 K/W Thermal resistance, junction - ambient, leaded R thJA -- 6 2 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area5) -- 4 0 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 55 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=20 µA 2.1 3.0 4.0 Zero gate voltage drain current I DSS V DS=55 V, V GS=0 V, T j=25 °C --1 µ A V DS=55 V, V GS=0 V, T j=125 °C2) - 1 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance RDS(on) V GS=10 V, I D=15 A - 21.6 25.1 m Ω V GS=10 V, I D=15 A, SMD version - 21.3 24.8 Values Rev. 1.0 page 2 2006-04-03

IPI25N06S3-25, IPP25N06S3-25 Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics2) Input capacitance C iss - 1862 - pF Output capacitance C oss - 283 - Reverse transfer capacitance Crss - 270 - Turn-on delay time t d(on) -1 5- n s Rise time t r -2 7- Turn-off delay time t d(off) -1 6- Fall time t f -2 7- Gate Charge Characteristics2) Gate to source charge Q gs -1 4- n C Gate to drain charge Q gd -6- Gate charge total Q g -2 7 4 1 Gate plateau voltage V plateau - 7.0 - V Reverse Diode2) Diode continous forward current I S - - 25 A Diode pulse current I S,pulse - - 100 Diode forward voltage V SD V GS=0 V, I F=25 A, T j=25 °C 0.6 0.9 1.3 V Reverse recovery time t rr V R=27.5 V, I F=I S, di F/dt =100 A/µs -3 8 n s Reverse recovery charge Q rr V R=27.5 V, I F=I S, di F/dt =100 A/µs -3 0 n C 2) Defined by design. Not subject to production test. 3) See diagrams 12 and 13. 4) Qualified at -5V and +20V. 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 1) Current is limited by bondwire; with an R thJC = 3.3 K/W the chip is able to carry 30 A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos T C=25 °C Values V GS=0 V, V DS=25 V, f =1 MHz V DD=27.5 V, V GS=10 V, I D=25 A, R G=14.8 Ω V DD=11 V, I D=25 A, V GS=0 to 10 V Rev. 1.0 page 3 2006-04-03

IPI25N06S3-25, IPP25N06S3-25

1 Power dissipation 2 Drain current

P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 100 1000 0.1 1 10 100 V DS [V] I D [A] limited by on-state resistance single pulse 0.01 0.05 0.1 0.5 10010-110-210-310-410-510-610-7 101 100 10-1 10-2 10-3 t p [s] Z thJC [K/W] 0 50 100 150 200 T C [°C] P tot [W] 0 50 100 150 200 T C [°C] I D [A] Rev. 1.0 page 4 2006-04-03

IPI25N06S3-25, IPP25N06S3-25 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 25 A; V GS = 10 V parameter: T j -60 -20 20 60 100 140 180 T j [°C] R DS(on) [mΩ ] 5 V 6 V 7 V 8 V 10 V 100 02468 V DS [V] I D [A]

5.5 V 6 V

I D [A] R DS(on) [mΩ ] -55 °C 25 °C 175 °C 012345678 V GS [V] I D [A] Rev. 1.0 page 5 2006-04-03

IPI25N06S3-25, IPP25N06S3-25 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 11 Typical forward diode characteristicis 12 Typ. avalanche characteristics IF = f(VSD) I A S= f(t AV) parameter: T j parameter: Tj(start) 25°C 100°C 150°C 100 1 10 100 1000 t AV [µs] I AV [A] 25 °C175 °C 102 101 100 V SD [V] I F [A] 20µA 200µA 1.5 2.5 3.5 -60 -20 20 60 100 140 180 T j [°C] V GS(th) [V] Ciss Coss Crss 102 103 104 0 5 10 15 20 25 30 V DS [V] C [pF] Rev. 1.0 page 6 2006-04-03

IPI25N06S3-25, IPP25N06S3-25 13 Typical avalanche energy 14 Typ. drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 25 A pulsed parameter: V DD -60 -20 20 60 100 140 180 T j [°C] V BR(DSS) [V]

11 V 44 V

Q gate [nC] V GS [V] 12A 100 125 150 0 50 100 150 200 T j [°C] E AS [mJ] V GS Qgate Qgs Qgd Q g V GS Qgate Qgs Qgd Q g Rev. 1.0 page 7 2006-04-03

IPI25N06S3-25, IPP25N06S3-25 Published by Infineon Technologies AG St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 2004 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies Office (www.infineon.com) Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies Office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2006-04-03