IPG20N04S4L-11A INFINEON | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

Features

  • Dual N-channel Logic Level - Enhancement mode
  • AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested
  • Feasible for automatic optical inspection (AOI) Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current one channel active I D T C=25 °C, V GS=10 V1) 20 A T C=100 °C, V GS=10 V2) 20 Pulsed drain current2) one channel active I D,pulse - 80 Avalanche energy, single pulse2, 4) E AS I D=10A 80 mJ Avalanche current, single pulse4) I AS - 15 A Gate source voltage V GS -± 1 6 V Power dissipation one channel active P tot T C=25 °C 41 W Operating and storage temperature T j, T stg - -55 ... +175 °C Value VDS 40 V RDS(on),max 4) 11.6 mΩ ID 20 A Product Summary Type Package Marking IPG20N04S4L-11A PG-TDSON-8-10 4N04L11 PG-TDSON-8-10 Rev. 1.0 page 1 2013-02-28

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC -- - 3 . 7 K / W SMD version, device on PCB R thJA minimal footprint - 100 - 6 cm2 cooling area3) -6 0- Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 40 - - V Gate threshold voltage V GS(th) V DS=V GS, I D= 15µA 1.2 1.7 2.2 Zero gate voltage drain current4) I DSS V DS=40 V, V GS=0 V, T j=25 °C -0 . 0 11 µ A V DS=18 V, V GS=0 V, T j=85 °C2) - 1 100 Gate-source leakage current4) I GSS V GS=16 V, V DS=0 V - - 100 nA Drain-source on-state resistance4) R DS(on) V GS=4.5 V, I D=10A - 13.1 15.5 mΩ V GS=10 V, I D=17A - 10.1 11.6 Values Rev. 1.0 page 2 2013-02-28

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics2) Input capacitance4) C iss - 1530 1990 pF Output capacitance4) C oss - 300 390 Reverse transfer capacitance4) Crss -1 3 3 0 Turn-on delay time t d(on) -5- n s Rise time t r -2- Turn-off delay time t d(off) -2 5- Fall time t f -1 5- Gate Charge Characteristics2, 4) Gate to source charge Q gs -4 . 5 5 . 9 n C Gate to drain charge Q gd -2 . 2 5 . 1 Gate charge total Q g -2 0 2 6 Gate plateau voltage V plateau -2 . 9- V Reverse Diode Diode continous forward current2) one channel active I S -- 2 0 A Diode pulse current2) one channel active I S,pulse -- 8 0 Diode forward voltage V SD V GS=0 V, I F=17 A, T j=25 °C -0 . 9 1 . 3 V Reverse recovery time2) t rr V R=20 V, I F=I S, di F/dt =100 A/µs -3 2- n s Reverse recovery charge2, 4) Q rr -2 5- n C 4) Per channel 2) Specified by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 1) Current is limited by bondwire; with an R thJC =3.7 K/W the chip is able to carry 46A at 25°C. T C=25 °C Values V GS=0 V, V DS=25 V, f =1 MHz V DD=20 V, V GS=10 V, I D=20 A, R G=11 Ω V DD=32 V, I D=20 A, V GS=0 to 10 V Rev. 1.0 page 3 2013-02-28

1 Power dissipation 2 Drain current

P tot = f(T C); V GS ≥ 6 V; one channel active I D = f(T C); V GS ≥ 6 V; one channel active 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25°C; D =0; one channel active Z thJC = f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 0.1 100 0.1 1 10 100 ID [A] VDS [V] single pulse 0.01 0.05 0.1 0.5 10-6 10-5 10-4 10-3 10-2 10-1 100 10-2 10-1 100 101 ZthJC [K/W] tp [s] 0 50 100 150 200 Ptot [W] TC [°C] 0 50 100 150 200 ID [A] TC [°C] Rev. 1.0 page 4 2013-02-28

5 Typ. output characteristics4) 6 Typ. drain-source on-state resistance4) I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics4) 8 Typ. drain-source on-state resistance4) I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 17 A; V GS = 10 V parameter: T j -60 -20 20 60 100 140 180 RDS(on) [mΩ] Tj [°C] 3 V 3.5 V 4 V

4.5 V10 V

ID [A] VDS [V] 3 V 3.5 V 4 V 4.5 V 10 V 0 2 04 06 08 0 RDS(on) [mΩ] ID [A] -55 °C 25 °C 175 °C 12345 ID [A] VGS [V] Rev. 1.0 page 5 2013-02-28

9 Typ. gate threshold voltage 10 Typ. Capacitances4) V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D

11 Typical forward diode characteristicis4) 12 Avalanche characteristics4)

IF = f(VSD) I A S= f(t AV) parameter: T j parameter: Tj(start) 25 °C 100 °C150 °C 0.1 100 1 10 100 1000 IAV [A] tAV [µs] 25 °C175 °C 100 101 102 IF [A] VSD [V] 15µA 150µA 0.5 1.5 2.5 -60 -20 20 60 100 140 180 VGS(th) [V] Tj [°C] Ciss Coss Crss 100 101 102 103 104 0 5 10 15 20 25 30 C [pF] VDS [V] Rev. 1.0 page 6 2013-02-28

13 Avalanche energy4) 14 Drain-source breakdown voltage

E AS = f(T j), I D = 10A V BR(DSS) = f(T j); I D = 1 mA 15 Typ. gate charge4) 16 Gate charge waveforms V GS = f(Q gate); I D = 20 A pulsed parameter: V DD V GS Q gate V gs(th) Q g(th) Q gs Q gd Q sw Q g -60 -20 20 60 100 140 180 VBR(DSS) [V] Tj [°C] 8 V 32 V 0 5 10 15 20 VGS [V] Qgate [nC] 100 25 50 75 100 125 150 175 EAS [mJ] Tj [°C] Rev. 1.0 page 7 2013-02-28

81726 Munich, Germany

© Infineon Technologies AG 2012 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2013-02-28

Revision History

Revision 1.0 Date 14.11.2012 Changes Data Sheet revision 1.0 Rev. 1.0 page 9 2013-02-28