IPD80R2K8CE ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark1 iscN-ChannelMOSFETTransistor IPD80R2K8CE,IIPD80R2K8CE
- FEATURES
- Staticdrain-source on-resistance: RDS(on)≤2.8Ω
- Enhancementmode:
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- DESCRITION
- Highpeak current capability
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 800 V VGS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous 1.9 A IDM DrainCurrent-SinglePulsed 6 A PD TotalDissipation@TC=25℃ 42 W Tj Max.OperatingJunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-casethermalresistance 3 ℃/W Rth(j-a) Channel-to-ambientthermalresistance 62 ℃/W
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark2 iscN-ChannelMOSFETTransistor IPD80R2K8CE,IIPD80R2K8CE ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=0.25mA 800 V VGS(th) GateThresholdVoltage VDS=VGS;ID=0.12mA 2.1 3.9 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=1.1A 2.8 Ω IGSS Gate-SourceLeakageCurrent VGS=20V;VDS=0V 0.1 μA IDSS Drain-SourceLeakageCurrent VDS=800V;VGS=0V 5 μA VSD Diodeforwardvoltage IF=1.9A,VGS =0V 1.2 V