IPD65R380E6 ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark1 iscN-ChannelMOSFETTransistor IPD65R380E6,IIPD65R380E6
- FEATURES
- Staticdrain-source on-resistance: RDS(on)≤0.38Ω
- Enhancementmode:
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- DESCRITION
- Veryhigh commutation ruggedness
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 650 V VGS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous 10.6 A IDM DrainCurrent-SinglePulsed 29 A PD TotalDissipation@TC=25℃ 83 W Tj Max.OperatingJunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-casethermalresistance 1.5 ℃/W Rth(j-a) Channel-to-ambientthermalresistance 62 ℃/W
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark2 iscN-ChannelMOSFETTransistor IPD65R380E6,IIPD65R380E6 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=1mA 650 V VGS(th) GateThresholdVoltage VDS=VGS;ID=0.32mA 2.5 3.5 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=3.2A 0.38 Ω IGSS Gate-SourceLeakageCurrent VGS=20V;VDS=0V 0.1 μA IDSS Drain-SourceLeakageCurrent VDS=650V;VGS=0V 1 μA VSD Diodeforwardvoltage IF=4.9A,VGS =0V 0.9 V