IPD600N25N3 ISC | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark1 iscN-ChannelMOSFETTransistor IPD600N25N3,IIPD600N25N3
- FEATURES
- Staticdrain-source on-resistance: RDS(on)≤60mΩ
- Enhancementmode:
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- DESCRITION
- Highfrequencyswitching
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 250 V VGS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous 25 A IDM DrainCurrent-SinglePulsed 100 A PD TotalDissipation@TC=25℃ 136 W Tj Max.OperatingJunctionTemperature 175 ℃ Tstg StorageTemperature -55~175 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-casethermalresistance 1.1 ℃/W Rth(j-a) Channel-to-ambientthermalresistance 75 ℃/W
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark2 iscN-ChannelMOSFETTransistor IPD600N25N3,IIPD600N25N3 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=1mA 250 V VGS(th) GateThresholdVoltage VDS=VGS;ID=90μA 2 4 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=25A 60 mΩ IGSS Gate-SourceLeakageCurrent VGS=20V 0.1 μA IDSS Drain-SourceLeakageCurrent VDS=160V;VGS=0V 1 μA VSD Diodeforwardvoltage IF=25A,VGS =0V 1.2 V