IPD110N12N3 ISC | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark1 iscN-ChannelMOSFETTransistor IPD110N12N3,IIPD110N12N3
- FEATURES
- Staticdrain-source on-resistance: RDS(on)≤11mΩ
- Enhancementmode:
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- DESCRITION
- Idealforhigh-frequencyswitchingand synchronousrectification
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 120 V VGS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous 75 A IDM DrainCurrent-SinglePulsed 300 A PD TotalDissipation@TC=25℃ 136 W Tj Max.OperatingJunctionTemperature 175 ℃ Tstg StorageTemperature -55~175 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-casethermalresistance 1.1 ℃/W Rth(j-a) Channel-to-ambientthermalresistance 75 ℃/W
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark2 iscN-ChannelMOSFETTransistor IPD110N12N3,IIPD110N12N3 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=1mA 120 V VGS(th) GateThresholdVoltage VDS=VGS;ID=83μA 2 4 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=75A 11 mΩ IGSS Gate-SourceLeakageCurrent VGS=20V;VDS=0V 0.1 μA IDSS Drain-SourceLeakageCurrent VDS=120V;VGS=0V 1 μA VSD Diodeforwardvoltage IF=75A,VGS =0V 1.2 V