IPD088N06N3G ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscN-ChannelMOSFETTransistor IPD088N06N3G
- FEATURES
- WithTO-252(DPAK)packaging
- Withlowgatedrive requirements
- Veryhigh commutation ruggedness
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Switching applications
- LCD&PDPTV
- PCsilverbox
- UPSandsolar
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 60 V VGSS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous@TC=25℃ TC=100℃ 47 A IDM DrainCurrent-SinglePulsed 200 A PD TotalDissipation 71 W Tj OperatingJunctionTemperature -55~175 ℃ Tstg StorageTemperature -55~175 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 2.1 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscN-ChannelMOSFETTransistor IPD088N06N3G ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=1mA 60 V VGS(th) GateThresholdVoltage VDS=±20V;ID=0.034mA 2 4 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=50A 7.1 8.8 mΩ IGSS Gate-SourceLeakageCurrent VGS= ±20V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakageCurrent VDS=60V;VGS=0V@Tj=25℃ Tj=125℃ 100 μA VSDF Diodeforwardvoltage ISD=50A,VGS =0V 1.2 V