IPD068P03L3G INFINEON | Alldatasheet

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Technical content

Features

  • single P-Channel in DPAK
  • Qualified according JEDEC1) for target applications
  • 175 °C operating temperature
  • 100% Avalanche tested
  • Pb-free; RoHS compliant, halogen free
  • applications: power management Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C A T C=100 °C Pulsed drain current I D,pulse T C=25 °C2) Avalanche energy, single pulse E AS I D=-70 A, R GS=25 Ω mJ Gate source voltage V GS V Power dissipation P tot T C=25 °C W Operating and storage temperature T j, T stg °C ESD class JESD22-A114 HBM Soldering temperature °C IEC climatic category; DIN IEC 68-1 1) J-STD20 and JESD22 55/175/56 -55 ... 175 ±20 100 260 Value 149 -280 -70 -70 1C (1 kV-2 kV) PG-TO252-3 068P03L V DS -30 V R DS(on),max 6.8 mΩ 11.0 A Product Summary IPD068P03L3 G PackageType Marking Lead free Packing Yes non dry PG-TO252-3 I DI D V GS = 10V V GS = 4.5V -70 Rev. 2.0 page 1 2009-05-27

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 1.5 K/W Thermal resistance, junction - ambient R thJA 6 cm2 cooling area2) -- 5 0 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250µA -30 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=-150 µA -1.0 -1.5 -2.0 Zero gate voltage drain current I DSS V DS=-30 V, V GS=0 V, V DS=-30 V, V GS=0 V, T j=150 °C - -10 -100 Gate-source leakage current I GSS V GS=-20 V, V DS=0 V - -10 -100 nA Drain-source on-state resistance R DS(on) V GS=-4.5 V, I D=-45 A - 7.0 11.0 mΩ Gate resistance R G - 5.8 - Ω Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-70 A 50 100 - S 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Values Rev. 2.0 page 2 2009-05-27

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 5150 7720 pF Output capacitance C oss - 2090 3140 Reverse transfer capacitance C rss - 160 240 Turn-on delay time t d(on) - 11 16.5 ns Rise time t r - 100 150 Turn-off delay time t d(off) - 84 126 Fall time t f -3 1 4 7 Gate Charge Characteristics3) Gate to source charge Q gs -1 9 2 5 n C Gate charge at threshold Q g(th) -8 1 1 Gate to drain charge Q gd -8 1 3 Switching charge Q sw -1 9 2 7 Gate charge total Q g -6 8 9 1 Gate plateau voltage V plateau - 3.7 - V Output charge Q oss V DD=-15 V, V GS=0 V -4 8 6 4 n C Reverse Diode Diode continous forward current I S - - 30 A Diode pulse current I S,pulse - - 280 Diode forward voltage V SD V GS=0 V, I F=-70 A, Reverse recovery time t rr V R=15 V, I F=-70 A, di F/dt =100 A/µs -4 6 6 9 n s Reverse recovery charge Q rr -4 4- n C T C=25 °C Values V GS=0 V, V DS=-15 V, f =1 MHz V DD=-15 V, V GS=-

10 V, I D=-70 A,

R G=6 Ω V DD=-15 V, I D=-70 A, V GS=0 to -10 V Rev. 2.0 page 3 2009-05-27

1 Power dissipation 2 Drain current

P tot=f(T C) I D=f(T C); |V GS|≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C1); D =0 Z thJS=f(t p) parameter: t p parameter: D =t p/T 10 µs 100 µs 1 ms 10 ms DC 10210110010-1 103 102 101 100 -V DS [V] -I D [A] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10110010-110-210-310-410-5 101 100 10-1 10-2 0.01 0.1 t p [s] Z thJS [K/W] 100 110 0 20 40 60 80 100 120 140 160 180 T C [°C] P tot [W] 0 20 40 60 80 100 120 140 160 180 T C [°C] -I D [A] 1 µs Rev. 2.0 page 4 2009-05-27

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j -3.0 V -3.2 V -3.5 V -4.5V -10 V 0 1 02 03 04 05 06 07 0 -I D [A] R DS(on) [mΩ] 25 °C 150 °C 01234 -V GS [V] -I D [A] 100 110 0 1 02 03 04 05 06 07 0 -I D [A] g fs [S] -2.7 V -3.0 V -3.2 V -3.5 V -4.5 V -10 V 0123 -V DS [V] -I D [A] Rev. 2.0 page 5 2009-05-27

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-70 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-150 µA 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ. 98 % -60 -20 20 60 100 140 180 T j [°C] R DS(on) [mΩ] Ciss Coss Crss 104 103 102 101 0 5 10 15 20 25 30 -V DS [V] C [pF] typ. min. max. 0.5 1.5 2.5 -60 -20 20 60 100 140 180 T j [°C] -V GS(th) [V] 25 °C, typ 150 °C, typ 25 °C, 98% 150 °C, 98% 0.1 100 0 0.5 1 1.5 -V SD [V] I F [A] Rev. 2.0 page 6 2009-05-27

13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-70 A pulsed parameter: T j(start) parameter: V DD

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=-250 µA -6 V -15 V -24 V 0 2 04 06 08 0 -Q gate [nC] -V GS [V] -60 -20 20 60 100 140 180 T j [°C] -V BR(DSS) [V] V GS Q gate V gs(t h ) Q g(th) Q gs Q gd Q sw Q g 25 °C 100 °C 125 °C 103102101100 102 101 100 t AV [µs] -I AV [A] Rev. 2.0 page 7 2009-05-27

Rev. 2.0 page 8 2009-05-27

81726 Munich, Germany

© 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 9 2009-05-27