IPD068P03L3G

IPD068P03L3G UMW | Alldatasheet

Document overview

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Technical content

Features

• Qualified according JEDEC1) for target applications
• 175 °C operating temperature
• 100% Avalanche tested
• Pb-free; RoHS compliant, halogen free
• applications: power management Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C A T C=100 °C Pulsed drain current I D,pulse T C=25 °C2) Avalanche energy, single pulse E AS I D=-70 A, R GS=25 W mJ Gate source voltage V GS V Power dissipation P tot T C=25 °C W Operating and storage temperature T j, T stg °C ESD class JESD22-A114 HBM Soldering temperature °C IEC climatic category; DIN IEC 68-1 1) J-STD20 and JESD22 Value 149 -280 -70 -70 tbd 55/175/56 -55 ... 175 ±20 100 260 (VGS = -10V) VDS (V) =-30V ID = -70A RDS(ON) ＜ 6.8mΩ(VGS=-10V) RDS(ON) ＜ 11m Ω(VGS=-4.5V) Product Summary UMW R IPD068P03L3G-30V P-Channel MOSFETwww.umw-ic.com 1 UTD Semiconductor Co.,Limited

Parameter Symbol Conditions Unit min. typ. max. Thermal resistance, junction - case R thJC 1.5 K/W Thermal resistance, junction - ambient R thJA 6 cm2 cooling area2) 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250mA -30 V Gate threshold voltage V GS(th) V DS=V GS, I D=-150 µA -1.0 -1.5 -2.0 Zero gate voltage drain current I DSS V DS=-30 V, V GS=0 V, T j=25 °C -0.1 -1 µA V DS=-30 V, V GS=0 V, T j=150 °C -10 -100 Gate-source leakage current I GSS V GS=-20 V, V DS=0 V -10 -100 nA Drain-source on-state resistance R DS(on) V GS=-4.5 V, I D=-45 A 7.0 11.0 mW V GS=-10 V, I D=-70 A 5.0 6.8 Gate resistance R G 5.8 W Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-70 A 50 100 S 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Values UMW R IPD068P03L3G-30V P-Channel MOSFET www.umw-ic.com 2 UTD Semiconductor Co.,Limited

Parameter Symbol Conditions Unit min. typ. max. Input capacitance C iss 5150 7720 pF Output capacitance C oss 2090 3140 Reverse transfer capacitance C rss 160 240 Turn-on delay time t d(on) 11 16.5 ns Rise time t r 100 150 Turn-off delay time t d(off) 84 126 Fall time t f 31 47 Gate to source charge Q gs 19 25 nC Gate charge at threshold Q g(th) 8 11 Gate to drain charge Q gd 8 13 Switching charge Q sw 19 27 Gate charge total Q g 68 91 Gate plateau voltage V plateau 3.7 V Output charge Q oss V DD=-15 V, V GS=0 V 48 64 nC Diode continous forward current I S 30 A Diode pulse current I S,pulse 280 Diode forward voltage V SD V GS=0 V, I F=-70 A, T j=25 °C -1.2 V Reverse recovery time t rr V R=15 V, I F=-70 A, di F/dt =100 A/µs 46 69 ns Reverse recovery charge Q rr 44 nC T C=25 °C Values V GS=0 V, V DS=-15 V, f =1 MHz V DD=-15 V, V GS=-10 V, I D=-70 A, R G,ext=6 W V DD=-15 V, I D=-70 A, V GS=0 to -10 V UMW R IPD068P03L3G-30V P-Channel MOSFET www.umw-ic.com 3 UTD Semiconductor Co.,Limited

1 Power dissipation 2 Drain current

P tot=f(T C) I D=f(T C); |V GS|≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C1); D =0 Z thJS=f(t p) parameter: t p parameter: D =t p/T 10 µs 100 µs 1 ms 10 ms DC 10-1 100 101 102 100 101 102 103 -ID [A] -VDS [V] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10-5 10-4 10-3 10-2 10-1 100 101 10-2 10-1 100 101 0.01 0.1 ZthJS [K/W] tp [s] 100 110 0 20 40 60 80 100 120 140 160 180 Ptot [W] TC [°C] 0 20 40 60 80 100 120 140 160 180 -ID [A] TC [°C] 1 µs UMW R IPD068P03L3G-30V P-Channel MOSFETwww.umw-ic.com 4 UTD Semiconductor Co.,Limited

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j -3.0 V -3.2 V -3.5 V -4.5V -10 V 0 10 20 30 40 50 60 70 RDS(on) [mW] -ID [A] 25 °C 150 °C 0 1 2 3 4 -ID [A] -VGS [V] 100 110 0 10 20 30 40 50 60 70 gfs [S] -ID [A] -2.7 V -3.0 V -3.2 V -3.5 V -4.5 V -10 V 0 1 2 3 -ID [A] -VDS [V] UMW R IPD068P03L3G-30V P-Channel MOSFETwww.umw-ic.com 5 UTD Semiconductor Co.,Limited

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-70 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-150 mA 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ. 98 % -60 -20 20 60 100 140 180 RDS(on) [mW] Tj [°C] Ciss Coss Crss 101 102 103 104 0 10 20 30 C [pF] -VDS [V] typ. min. max. 0.5 1.5 2.5 -60 -20 20 60 100 140 180 -VGS(th) [V] Tj [°C] 25 °C, typ 150 °C, typ 25 °C, 98% 150 °C, 98% 0.1 100 0 0.5 1 1.5 IF [A] -VSD [V] UMW R IPD068P03L3G-30V P-Channel MOSFETwww.umw-ic.com 6 UTD Semiconductor Co.,Limited

13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=-70 A pulsed parameter: T j(start) parameter: V DD

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=-250 mA -6 V -15 V -24 V 0 20 40 60 80 -VGS [V] -Qgate [nC] -60 -20 20 60 100 140 180 -VBR(DSS) [V] Tj [°C] V GS Q gate V gs(th) Qg(th) Qgs Qgd Qsw Qg 25 °C 100 °C 125 °C 100 101 102 103 100 101 102 -IAV [A] tAV [µs] UMW R IPD068P03L3G-30V P-Channel MOSFETwww.umw-ic.com 7 UTD Semiconductor Co.,Limited

R IPD068P03L3G-30V P-Channel MOSFETwww.umw-ic.com 8 UTD Semiconductor Co.,Limited Dimensions Millimeters InchesRef. A B C D E G H L 2.10 0.66 0.40 2.50 0.10 0.86 0.60 0.083 0.026 0.016 0.098 0.004 0.034 0.024 6.40 9.50 10.70 0.374 0.421 0.053 0.065 5.90 6.30 0° 6° 0.232 0.248 6.80 0.252 0.268 4.47 4.67 0.176 0.184 1.09 1.21 0.043 0.048 1.35 1.65 0° 6° B2 5.18 5.48 0.202 0.216 C2 0.44 0.58 0.017 0.023 5.30REF 4.63 0.182 0.209REF E H B G L DETAIL A DETAIL A A C D Package Mechanical Data TO-252 Ordering information Order code Package Baseqty Deliverymode UMW IPD068P03L3G TO-252 2500 Tape and reel Marking