IPD068P03L3 ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark1 iscP-ChannelMOSFETTransistor IPD068P03L3,IIPD068P03L3
- FEATURES
- Staticdrain-source on-resistance: RDS(on)≤6.8mΩ
- Enhancementmode:
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- DESCRITION
- 175°Coperatingjunction temperature
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage -30 V VGS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous -70 A IDM DrainCurrent-SinglePulsed -280 A PD TotalDissipation@TC=25℃ 100 W Tj Max.OperatingJunctionTemperature 175 ℃ Tstg StorageTemperature -55~175 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-casethermalresistance 1.5 ℃/W Rth(j-a) Channel-to-ambientthermalresistance 50 ℃/W
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark2 iscP-ChannelMOSFETTransistor IPD068P03L3,IIPD068P03L3 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=-0.25mA -30 V VGS(th) GateThresholdVoltage VDS=VGS;ID=-0.15mA -1.0 -2.0 V RDS(on) Drain-SourceOn-Resistance VGS=-10V;ID=-70A 6.8 mΩ IGSS Gate-SourceLeakageCurrent VGS=-20V;VDS=0V -0.1 μA IDSS Drain-SourceLeakageCurrent VDS=-30V;VGS=0V -1 μA VSD Diodeforwardvoltage IF=-70A,VGS =0V -1.2 V