IPD053N06N ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark1 iscN-ChannelMOSFETTransistor IPD053N06N,IIPD053N06N
- FEATURES
- Staticdrain-source on-resistance: RDS(on)≤5.3mΩ
- Enhancementmode:
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- DESCRITION
- Optimizedforsynchronous rectification
- ABSOLUTEMAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 60 V VGS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous 45 A IDM DrainCurrent-SinglePulsed 180 A PD TotalDissipation@TC=25℃ 83 W Tj Max.OperatingJunctionTemperature 175 ℃ Tstg StorageTemperature -55~175 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-casethermalresistance 1.8 ℃/W Rth(j-a) Channel-to-ambientthermalresistance 62 ℃/W
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark2 iscN-ChannelMOSFETTransistor IPD053N06N,IIPD053N06N ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=1mA 60 V VGS(th) GateThresholdVoltage VDS=VGS;ID=36μA 2.1 3.3 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=45A 5.3 mΩ IGSS Gate-SourceLeakageCurrent VGS=20V;VDS=0V 0.1 μA IDSS Drain-SourceLeakageCurrent VDS=60V;VGS=0V 1 μA VSD Diodeforwardvoltage IF=45A,VGS =0V 1.2 V