IPD050N10N5 ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark1 iscN-ChannelMOSFETTransistor IPD050N10N5,IIPD050N10N5
- FEATURES
- Staticdrain-source on-resistance: RDS(on)≤5mΩ
- Enhancementmode:
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- DESCRITION
- Highfrequencyswitching
- ABSOLUTEMAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 100 V VGS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous 80 A IDM DrainCurrent-SinglePulsed 320 A PD TotalDissipation@TC=25℃ 150 W Tj Max.OperatingJunctionTemperature 175 ℃ Tstg StorageTemperature -55~175 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-casethermalresistance 1 ℃/W Rth(j-a) Channel-to-ambientthermalresistance 75 ℃/W
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark2 iscN-ChannelMOSFETTransistor IPD050N10N5,IIPD050N10N5 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=1mA 100 V VGS(th) GateThresholdVoltage VDS=VGS;ID=84μA 2.2 3.8 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=40A 5 mΩ IGSS Gate-SourceLeakageCurrent VGS=20V 0.1 μA IDSS Drain-SourceLeakageCurrent VDS=100V;VGS=0V 1 μA VSD Diodeforwardvoltage IF=40A,VGS =0V 1.2 V