IPD038N06N3G INFINEON | Alldatasheet

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Technical content

Features

  • Excellent gate charge x R DS(on) product (FOM)
  • Very low on-resistance R DS(on)
  • N-channel, normal level
  • for sync. rectification, drives and dc/dc SMPS
  • Avalanche rated
  • Very low on-resistance R DS(on)
  • Qualified according to JEDEC1) for target applications
  • Pb-free plating; RoHS compliant Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D V GS=10 V, T C=25 °C 90 A V GS=10 V, T C=100 °C 90 Pulsed drain current2) I D,pulse T C=25 °C 360 Avalanche current, single pulse3) I AS T C=25 °C 90 Avalanche energy, single pulse E AS I D=90 A, R GS=25 Ω 165 mJ Gate source voltage V GS ±20 V Value 1) J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information V DS 60 V R DS(on),max 3.8 mΩ I D 90 A Product Summary Type IPD038N06N3 G Marking 038N06N previous engineering sample code: IPD04xN06N Rev.1.02 page 1 2010-08-12

Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Power dissipation P tot T C=25 °C 188 W Operating and storage temperature T j, T stg -55 ... 175 °C IEC climatic category; DIN IEC 68-1 55/175/56 Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 0.8 K/W SMD version, device on PCB R thJA minimal footprint - - 75 6 cm² cooling area4) -- 5 0 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 60 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=90 µA 234 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V, T j=25 °C - 0.1 1 µA V DS=60 V, V GS=0 V, T j=125 °C - 10 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA R DS(on) V GS=10 V, I D=90 A - 3.1 3.8 mΩ Gate resistance R G - 1.3 - Ω Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=90 A 60 120 - S 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Value Values Drain-source on-state resistance Rev.1.02 page 2 2010-08-12

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 8000 - pF Output capacitance C oss - 1700 - Reverse transfer capacitance Crss -5 8- Turn-on delay time t d(on) -3 0- n s Rise time t r -7 0- Turn-off delay time t d(off) -4 0- Fall time t f -5- Gate Charge Characteristics5) Gate to source charge Q gs -4 2- n C Gate charge at threshold Q g(th) -2 4- Gate to drain charge Q gd -9- Switching charge Q sw -2 7- Gate charge total Q g -9 8- Gate plateau voltage V plateau - 5.3 - V Output charge Q oss V DD=30 V, V GS=0 V -7 7- Reverse Diode Diode continuous forward current I S - - 90 A Diode pulse current I S,pulse - - 360 Diode forward voltage V SD V GS=0 V, I F=90 A, T j=25 °C - 0.95 1.2 V Reverse recovery time t rr - 125 - ns Reverse recovery charge Q rr - 110 - nC 5) See figure 16 for gate charge parameter definition T C=25 °C Values V GS=0 V, V DS=30 V, f =1 MHz V DD=30 V, V GS=10 V, I D=90 A, R G=3.5 Ω V DD=30 V, I D=90 A, V GS=0 to 10 V V R=30 V, IF=50A, di F/dt =100 A/µs Rev.1.02 page 3 2010-08-12

1 Power dissipation 2 Drain current

P tot=f(T C) I D=f(T C); V GS≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 10 ms DC 10210110010-1 103 102 101 100 10-1 V DS [V] I D [A] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10010-110-210-310-410-510-6 0.01 0.1 0000001 t p [s] Z thJC [K/W] 100 120 140 160 180 200 0 50 100 150 200 T C [°C] P tot [W] 100 0 50 100 150 200 T C [°C] I D [A] Rev.1.02 page 4 2010-08-12

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 5 V 5.5 V 6 V 7 V 8 V 10 V 000 0 2 04 06 08 0 1 0 0 I D [A] R DS(on) [mΩ] 25 °C 175 °C 120 160 200 02468 V GS [V] I D [A] 120 160 0 2 04 06 08 0 1 0 0 I D [A] g fs [S] 5 V 5.5 V 6 V 7 V 8 V 10 V 000 120 160 200 0123 V DS [V] I D [A] Rev.1.02 page 5 2010-08-12

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=90 A; V GS=10 V V GS(th)=f(T j); V GS=V DS 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ max -60 -20 20 60 100 140 180 T j [°C] R DS(on) [mΩ] 90 µA 900 µA -60 -20 20 60 100 140 180 T j [°C] V GS(th) [V] Ciss Coss Crss 104 103 102 101 10 100 1000 10000 02 0 4 0 6 0 V DS [V] C [pF] 25 °C 175 °C 175°C 98% 25°C 98% 100 1000 V SD [V] I F [A] Rev.1.02 page 6 2010-08-12

13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=90 A pulsed parameter: T j(start) parameter: V DD

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA -60 -20 20 60 100 140 180 T j [°C] V BR(DSS) [V] V GS Q gate V gs(t h ) Q g(th) Q gs Q gd Q sw Q g 12 V 30 V 48 V 0 2 04 06 08 0 1 0 0 Q gate [nC] V GS [V] 25 °C 100 °C 150 °C 100 0.1 1 10 100 1000 t AV [µs] I AV [A] Rev.1.02 page 7 2010-08-12

PG-TO252-3 (D-Pak) Rev.1.02 page 8 2010-08-12

81726 Munich, Germany

© 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.1.02 page 9 2010-08-12