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Technical content

Features

  • Optimizedforsynchronousrectification
  • 100%avalanchetested
  • Superiorthermalresistance
  • N-channel,normallevel
  • QualifiedaccordingtoJEDEC1)fortargetapplications
  • Pb-freeleadplating;RoHScompliant
  • Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 3.3 mΩ ID 90 A QOSS 44 nC QG(0V..10V) 38 nC Type/OrderingCode Package Marking RelatedLinks IPD033N06N PG-TO252-3 033N06N - 1) J-STD20 and JESD22

OptiMOSTMPower-Transistor,60V IPD033N06N Rev.2.0,2016-09-12Final Data Sheet TableofContents

OptiMOSTMPower-Transistor,60V IPD033N06N Rev.2.0,2016-09-12Final Data Sheet 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current ID A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W Pulsed drain current1) ID,pulse - - 360 A TC=25°C Avalanche energy, single pulse2) EAS - - 60 mJ ID=90A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot 107

3.0 W TC=25°C

TA=25°C,RthJA=50K/W Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - 0.8 1.4 K/W - Device on PCB, minimal footprint RthJA - - 62 K/W - Device on PCB, 6 cm² cooling area3) RthJA - - 40 K/W - Soldering temperature, wave and reflow soldering are allowed Tsold - - 260 °C Reflow MSL1 1) See Diagram 3 for more detailed information 2) See Diagram 13 for more detailed information 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.

OptiMOSTMPower-Transistor,60V IPD033N06N Rev.2.0,2016-09-12Final Data Sheet 3Electricalcharacteristics Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 60 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2.1 2.8 3.3 V VDS=VGS,ID=50µA Zero gate voltage drain current IDSS 0.5 100 µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 3.0 4.1 3.3 5.0 mΩ VGS=10V,ID=90A VGS=6V,ID=22.5A Gate resistance1) RG - 1.2 1.8 Ω - Transconductance gfs 65 130 - S |VDS|>2|ID|RDS(on)max,ID=90A Table5Dynamiccharacteristics1) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 2700 3400 pF VGS=0V,VDS=30V,f=1MHz Output capacitance Coss - 670 840 pF VGS=0V,VDS=30V,f=1MHz Reverse transfer capacitance Crss - 28 56 pF VGS=0V,VDS=30V,f=1MHz Turn-on delay time td(on) - 10 - ns VDD=30V,VGS=10V,ID=90A, RG,ext,ext=1.6Ω Rise time tr - 5 - ns VDD=30V,VGS=10V,ID=90A, RG,ext,ext=1.6Ω Turn-off delay time td(off) - 20 - ns VDD=30V,VGS=10V,ID=90A, RG,ext,ext=1.6Ω Fall time tf - 5 - ns VDD=30V,VGS=10V,ID=90A, RG,ext,ext=1.6Ω Table6Gatechargecharacteristics2) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 14 - nC VDD=30V,ID=90A,VGS=0to10V Gate charge at threshold Qg(th) - 8 - nC VDD=30V,ID=90A,VGS=0to10V Gate to drain charge1) Qgd - 7 10 nC VDD=30V,ID=90A,VGS=0to10V Switching charge Qsw - 13 - nC VDD=30V,ID=90A,VGS=0to10V Gate charge total1) Qg - 38 44 nC VDD=30V,ID=90A,VGS=0to10V Gate plateau voltage Vplateau - 5.0 - V VDD=30V,ID=90A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 33 - nC VDS=0.1V,VGS=0to10V Output charge1) Qoss - 44 59 nC VDD=30V,VGS=0V 1) Defined by design. Not subject to production test 2) See ″Gate charge waveforms″ for parameter definition

OptiMOSTMPower-Transistor,60V IPD033N06N Rev.2.0,2016-09-12Final Data Sheet Table7Reversediode Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continuous forward current IS - - 89 A TC=25°C Diode pulse current IS,pulse - - 360 A TC=25°C Diode forward voltage VSD - 0.9 1.2 V VGS=0V,IF=45A,Tj=25°C Reverse recovery time1) trr - 39 63 ns VR=30V,IF=89A,diF/dt=100A/µs Reverse recovery charge Qrr - 45 - nC VR=30V,IF=89A,diF/dt=100A/µs 1) Defined by design. Not subject to production test

OptiMOSTMPower-Transistor,60V IPD033N06N Rev.2.0,2016-09-12Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 175 200 100 120 Ptot=f(TC) Diagram2:Draincurrent TC[°C] ID[A] 100 125 150 175 200 100 ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea VDS[V] ID[A] 10-1 100 101 102 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-6 10-5 10-4 10-3 10-2 10-1 10-3 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tp);parameter:D=tp/T

OptiMOSTMPower-Transistor,60V IPD033N06N Rev.2.0,2016-09-12Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 120 160 200 240 280 320 360 10V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.drain-sourceonresistance ID[A] RDS(on)[mΩ ] 120 160 200 240 280 320 360 4.5 V 5 V 5.5 V 6 V 7 V 10 V RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics VGS[V] ID[A] 120 160 200 240 280 320 360 175 °C 25 °C ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Diagram8:Typ.forwardtransconductance ID[A] gfs[S] 100 100 125 150 gfs=f(ID);Tj=25°C

OptiMOSTMPower-Transistor,60V IPD033N06N Rev.2.0,2016-09-12Final Data Sheet Diagram9:Drain-sourceon-stateresistance Tj[°C] RDS(on)[mΩ ] -60 -20 100 140 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 max typ RDS(on)=f(Tj);ID=90A;VGS=10V Diagram10:Typ.gatethresholdvoltage Tj[°C] VGS(th)[V] -60 -20 100 140 180 500 µA 50 µA VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances VDS[V] C[pF] 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram12:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 2.0 100 101 102 103 25 °C 175 °C 175°C max 25°C max IF=f(VSD);parameter:Tj

OptiMOSTMPower-Transistor,60V IPD033N06N Rev.2.0,2016-09-12Final Data Sheet Diagram13:Avalanchecharacteristics tAV[µs] IAV[A] 100 101 102 103 100 101 102 25 °C 100 °C 125 °C IAS=f(tAV);RGS=25Ω ;parameter:Tj(start) Diagram14:Typ.gatecharge Qgate[nC] VGS[V] 12 V 30 V 48 V VGS=f(Qgate);ID=90Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -60 -20 100 140 180 VBR(DSS)=f(Tj);ID=1mA Gate charge waveforms

OptiMOSTMPower-Transistor,60V IPD033N06N Rev.2.0,2016-09-12Final Data Sheet 5PackageOutlines Figure1OutlinePG-TO252-3,dimensionsinmm/inches

OptiMOSTMPower-Transistor,60V IPD033N06N Rev.2.0,2016-09-12Final Data Sheet RevisionHistory IPD033N06N Revision:2016-09-12,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-09-12 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.