IPB60R190C6 ISC | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscN-ChannelMOSFETTransistor IPB60R190C6
- FEATURES
- WithTO-263(D2PAK)packaging
- Ultra-fastbody diode
- Highspeed switching
- Veryhigh commutation ruggedness
- Easytouse
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operationz
- APPLICATIONS
- PFCstages,hard switchingPWMstages and resonant switching
- PCSilverbox,Adapter,LCD&PDPTV
- Lighting,Server,Telecom andUPS
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 600 V VGSS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous@TC=25℃ TC=100℃ 20.2 12.8 A IDM DrainCurrent-SinglePulsed 59 A PD TotalDissipation 151 W Tj OperatingJunctionTemperature -55~150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 0.83 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscN-ChannelMOSFETTransistor IPB60R190C6 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=0.25mA 600 V VGS(th) GateThresholdVoltage VDS=±20V;ID=0.63mA 2.5 3.5 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=9.5A 170 190 mΩ IGSS Gate-SourceLeakageCurrent VGS= ±20V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakageCurrent VDS=600V;VGS=0V 1 μA VSDF Diodeforwardvoltage ISD=9.5A,VGS =0V 0.9 V