IPB200N15N3G ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 IscN-ChannelMOSFETTransistor IPB200N15N3G
- FEATURES
- WithTo-263(D2PAK)package
- Lowinputcapacitanceandgate charge
- Lowgateinputresistance
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 150 V VGSS Gate-SourceVoltage ±30 V ID DrainCurrent-ContinuousTc=25℃ Tc=100℃ 40 A IDM DrainCurrent-SinglePulsed 200 A PD TotalDissipation@TC=25℃ 150 W Tch Max.OperatingJunctionTemperature 175 ℃ Tstg StorageTemperature -55~175 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 1.0 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 50 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 IscN-ChannelMOSFETTransistor IPB200N15N3G ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=1.0mA 150 V VGS(th) GateThresholdVoltage VDS=VGS;ID=0.09mA 2.0 4.0 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=50A 16 20 mΩ IGSS Gate-SourceLeakageCurrent VGS= ±20V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakage Current VDS=120V;VGS=0V;Tj=25℃ VDS=120V;VGS=0V;Tj=125℃ 100 μA VSDF Diodeforwardvoltage ISD=50A,VGS =0V 1.2 V