IPB180P04P4-03 ISC | Alldatasheet

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Technical content

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FEATURES

  • DrainCurrent-ID=-180A@TC=25℃
  • DrainSource Voltage-VDSS=-40V(Min)
  • Static Drain-Source On-Resistance -RDS(on) =2.8mΩ(Max)@VGS=-10V

APPLICATIONS

  • SwitchModePowerSupply
  • UninterruptiblePowerSupply ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage -40 V VGS Gate-SourceVoltage-Continuous ±20 V ID DrainCurrent-Continuous -180 A IDM DrainCurrent-SinglePulse -720 A PD TotalDissipation@TC=25℃ 150 W TJ Max.OperatingJunctionTemperature 175 ℃ Tstg StorageTemperature -55~175 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 1.0 ℃/W

www.iscsemi.com 2 ELECTRICALCHARACTERISTICS (TJ=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-SourceBreakdownVoltage VGS=0,ID=-1mA -40 -- -- V IDSS ZeroGateVoltageDrainCurrent VDS=-32V,VGS=0 -- -- -1 uA IGSS Gate-BodyLeakageCurrent VGS= ±20V,VDS=0 -- -- ±100 nA VGS(th) GateThresholdVoltage VDS=VGS,ID=-0.41mA -2.0 -- -4.0 V RDS(on) Drain-SourceOn-Resistance VGS=-10V,ID=-100A -- -- 2.8 mΩ VSD DiodeForwardVoltage ISD=-100A,VGS=0V - - -1.3 V OUTLINEPACKAGE(UNIT:mm)

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