IPB16CN10NG ISC | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 IscN-ChannelMOSFETTransistor IPB16CN10NG
- FEATURES
- WithTo-263(D2PAK)package
- Lowinputcapacitanceandgate charge
- Lowgateinputresistance
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 100 V VGSS Gate-SourceVoltage ±20 V ID DrainCurrent-ContinuousTc=25℃ Tc=100℃ 38 A IDM DrainCurrent-SinglePulsed 212 A PD TotalDissipation@TC=25℃ 100 W Tch Max.OperatingJunctionTemperature 175 ℃ Tstg StorageTemperature -55~175 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 1.5 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 40 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 IscN-ChannelMOSFETTransistor IPB16CN10NG ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=1mA 100 V VGS(th) GateThresholdVoltage VDS=VGS;ID=0.061mA 2.0 4.0 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=53A 12.2 16 mΩ IGSS Gate-SourceLeakageCurrent VGS= ±20V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakage Current VDS=95V;VGS=0V;Tj=25℃ VDS=80V;VGS=0V;Tj=125℃ 100 μA VSDF Diodeforwardvoltage ISD=53A,VGS =0V 1.0 1.2 V