IPB156N22NFD ISC | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 IscN-ChannelMOSFETTransistor IPB156N22NFD
- FEATURES
- WithTo-252(DPAK)package
- Lowinputcapacitanceandgate charge
- Lowgateinputresistance
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 220 V VGSS Gate-SourceVoltage ±20 V ID DrainCurrent-ContinuousTc=25℃ Tc=100℃ 56 A IDM DrainCurrent-SinglePulsed 288 A PD TotalDissipation@TC=25℃ 300 W Tch Max.OperatingJunctionTemperature 175 ℃ Tstg StorageTemperature -55~175 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 0.5 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 IscN-ChannelMOSFETTransistor IPB156N22NFD ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=1mA 220 V VGS(th) GateThresholdVoltage VDS=5V;ID=0.27mA 2.0 4.0 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=50A 12.9 15.6 mΩ IGSS Gate-SourceLeakageCurrent VGS= ±30V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakage Current VDS=176V;VGS=0V;Tj=25℃ VDS=176V;VGS=0V;Tj=125℃ 100 μA VSDF Diodeforwardvoltage ISD=72A,VGS =0V 1.2 V