IPB107N20N3 ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscN-ChannelMOSFETTransistor IPB107N20N3
- FEATURES
- WithTO-263(D2PAK)packaging
- Highspeed switching
- Lowgateinputresistance
- Standardlevelgate drive
- Easytouse
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Powersupply
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 200 V VGSS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous;Tc=25℃ Tc=100℃ 63 A IDM DrainCurrent-SinglePulsed 352 A PD TotalDissipation 300 W Tj OperatingJunctionTemperature 175 ℃ Tstg StorageTemperature -55~175 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 0.5 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 40 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscN-ChannelMOSFETTransistor IPB107N20N3 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=1mA 200 V VGS(th) GateThresholdVoltage VDS=VGS;ID=0.27mA 2 4 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=88A 9.9 11 mΩ IGSS Gate-SourceLeakageCurrent VGS=±20V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakageCurrent VDS=160V;VGS=0V;Tc=25℃ VDS=160V;VGS=0V;Tc=125℃ 100 μA VSDF Diodeforwardvoltage ISD=88A,VGS =0V 1.0 1.2 V