IPB049N08N5 ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscN-ChannelMOSFETTransistor IPB049N08N5
- FEATURES
- WithTO-263(D2PAK)packaging
- Ultra-fastbody diode
- Highspeed switching
- Verylowon-resistence
- Easytouse
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operationz
- APPLICATIONS
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 80 V VGSS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous 80 A IDM DrainCurrent-SinglePulsed 320 A PD TotalDissipation 125 W Tj OperatingJunctionTemperature -55~175 ℃ Tstg StorageTemperature -55~175 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 1.2 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscN-ChannelMOSFETTransistor IPB049N08N5 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=1mA 80 V VGS(th) GateThresholdVoltage VDS=±20V;ID=0.43mA 2.2 3.8 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=80A 4.3 4.9 mΩ IGSS Gate-SourceLeakageCurrent VGS= ±20V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakageCurrent VDS=80V;VGS=0V@Tj=25℃ Tj=125℃ 100 μA VSDF Diodeforwardvoltage ISD=80A,VGS =0V 1.2 V