IPB048N15N5LF ISC | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscN-ChannelMOSFETTransistor IPB048N15N5LF
- DESCRIPTION
- DrainCurrent ID=120A@TC=25℃
- DrainSource Voltage :VDSS=150V(Min)
- FastSwitching Speed
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS .
- Designedforhigh current,high speedswitchingapplications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-SourceVoltage(VGS=0) 150 V VGS Gate-SourceVoltage ±20 V ID DrainCurrent-continuous@TC=25℃ 120 A ID(puls) PulseDrainCurrent 480 A Ptot TotalDissipation@TC=25℃ 313 W Tj Max.OperatingJunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 0.40 ℃/W Rthj-a ThermalResistance,JunctiontoAmbient 62 ℃/W
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscN-ChannelMOSFETTransistor IPB048N15N5LF
- ELECTRICALCHARACTERISTICS(TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-SourceBreakdownVoltage VGS=0;ID=1mA 150 V VGS(th) GateThresholdVoltage VDS=VGS; ID=250µA 3.3 4.9 V VSD DiodeForwardOn-Voltage IF=100A;VGS=0 1.2 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=100A 4.8 mΩ IGSS Gate-BodyLeakageCurrent VGS= ±20V;VDS=0 ±5 µA IDSS ZeroGateVoltageDrainCurrent VDS=120V;VGS=0 2 µA VDS=120V;VGS=0;Tj=125℃ 100 Qg GateChargeTotal VDS=75V,ID=70A,VGS=10V 80 nC CiSS InputCapacitance VDS=75V;VGS=0V;f=1.0MHz 5900 pFCOSS OutputCapacitance 690 CrSS ReverseTransferCapacitance 7