IPB041N04N ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscN-ChannelMOSFETTransistor IPB041N04N
- FEATURES
- WithTO-263(D2PAK)packaging
- Highspeed switching
- Lowgateinputresistance
- Standardlevelgate drive
- Easytouse
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Powersupply
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 40 V VGSS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous;Tc=25℃ Tc=100℃ 80 A IDM DrainCurrent-SinglePulsed 400 A PD TotalDissipation 94 W Tj OperatingJunctionTemperature 175 ℃ Tstg StorageTemperature -55~175 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 1.6 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 40 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscN-ChannelMOSFETTransistor IPB041N04N ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=1mA 40 V VGS(th) GateThresholdVoltage VDS=VGS;ID=0.045mA 2.0 4.0 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=80A 3.3 4.1 mΩ IGSS Gate-SourceLeakageCurrent VGS=±20V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakageCurrent VDS=40V;VGS=0V;Tc=25℃ VDS=40V;VGS=0V;Tc=125℃ 100 μA VSDF Diodeforwardvoltage ISD=80A,VGS =0V 0.96 1.2 V