IPB034N06L3G ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 IscN-ChannelMOSFETTransistor IPB034N06L3G
- FEATURES
- WithTo-263(D2PAK)package
- Lowinputcapacitanceandgate charge
- Lowgateinputresistance
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 60 V VGSS Gate-SourceVoltage ±20 V ID DrainCurrent-ContinuousTc=25℃ Tc=100℃ 90 A IDM DrainCurrent-SinglePulsed 360 A PD TotalDissipation@TC=25℃ 167 W Tch Max.OperatingJunctionTemperature 175 ℃ Tstg StorageTemperature -55~175 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 0.9 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62.5 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 IscN-ChannelMOSFETTransistor IPB034N06L3G ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=1.0mA 60 V VGS(th) GateThresholdVoltage VDS=VGS;ID=0.093mA 1.2 2.2 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=90A 3.0 3.7 mΩ IGSS Gate-SourceLeakageCurrent VGS= ±20V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakage Current VDS=60V;VGS=0V;Tj=25℃ VDS=60V;VGS=0V;Tj=125℃ 100 μA VSDF Diodeforwardvoltage ISD=90A,VGS =0V 1.2 V