IPB033N10N5LF ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 IscN-ChannelMOSFETTransistor IPB033N10N5LF
- FEATURES
- WithTo-263(D2PAK)package
- Lowinputcapacitanceandgate charge
- Lowgateinputresistance
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 80 V VGSS Gate-SourceVoltage ±20 V ID DrainCurrent-ContinuousTc=25℃ Tc=100℃ 120 108 A IDM DrainCurrent-SinglePulsed 480 A PD TotalDissipation@TC=25℃ 179 W Tch Max.OperatingJunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 0.7 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 40 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 IscN-ChannelMOSFETTransistor IPB033N10N5LF ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=1mA 100 V VGS(th) GateThresholdVoltage VDS=VGS;ID=0.15mA 2.5 4.1 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=100A 2.7 3.3 mΩ IGSS Gate-SourceLeakageCurrent VGS= ±20V;VDS=0V ±5 μA IDSS Drain-SourceLeakage Current VDS=100V;VGS=0V;Tj=25℃ VDS=100V;VGS=0V;Tj=125℃ 100 μA VSDF Diodeforwardvoltage ISD=100A,VGS =0V 0.93 1.2 V