IPB018N10N5 ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
www.iscsemi.com 1
FEATURES
- Lowinputcapacitanceandgate charge
- Lowgateinputresistance
APPLICATIONS
- Switching applications ABSOLUTEMAXIMUMRATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 100 V VGSS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous@TC=25℃ TC=100℃ 176 136 A IDM DrainCurrent-SinglePulsed 704 A PD TotalDissipation 375 W Tch Max.OperatingJunctionTemperature 175 ℃ Tstg StorageTemperature -55~175 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 0.4 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 40 ℃/W
www.iscsemi.com 2 ELECTRICALCHARACTERISTICS(TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=1mA 100 -- -- V VGS(th) GateThresholdVoltage VDS=10V;ID=0.25mA 2 -- 4 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=100A -- -- 1.83 mΩ IGSS Gate-SourceLeakageCurrent VGS= ±20V;VDS=0V -- -- ±100 nA IDSS Drain-SourceLeakage Current VDS=100V;VGS=0V -- -- 7 μA VSD Diodeforwardvoltage ISD=100A,VGS =0V -- -- 1.0 V PRODUCTDISCLAIMER ISCreserves the rights tomakechangesof thecontent hereinthe datasheetatany timewithout notification.The informationcontained hereinis presentedonly as aguidefortheapplications ofour products. ISCproducts are intendedforusagein generalelectronic equipment.Theproducts are notdesigned for usein equipmentwhichrequire specialized qualityand/or reliability,orin equipment whichcould have applications inhazardous environments,aerospaceindustry,or medicalfield.Pleasecontactusif you intend ourproducts tobe used inthese specialapplications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaimsany and allliability,includingwithout limitation special,consequential orincidental damages. Itis strictlyprohibitedto reprintorcopy partorallof thisdatasheetwithoutpermission fromISC.