IPB009N03LG_16 INFINEON | Alldatasheet

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Technical content

Features

  • MOSFETforORingandUninterruptiblePowerSupply
  • QualifiedaccordingtoJEDEC1)fortargetapplications
  • N-channel
  • Logiclevel
  • Ultra-lowon-resistanceRDS(on)
  • 100%Avalanchetested
  • Pb-freeplating;RoHScompliant Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max 0.95 mΩ ID 180 A Type/OrderingCode Package Marking RelatedLinks IPB009N03L G PG-TO263-7 009N03L - 1) J-STD20 and JESD22

OptiMOSª3Power-Transistor,30V IPB009N03LG Rev.2.0,2016-04-21Final Data Sheet TableofContents

OptiMOSª3Power-Transistor,30V IPB009N03LG Rev.2.0,2016-04-21Final Data Sheet 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current ID 180 180 180 180 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C Pulsed drain current1) ID,pulse - - 1260 A TC=25°C Avalanche current, single pulse2) IAS - - 100 A TC=25°C Avalanche energy, single pulse EAS - - 610 mJ ID=100A,RGS=25Ω Reversediodedv/dt dv/dt - - 6 kV/µs ID=180A,VDS=24V,di/dt=200A/µs, Tj,max=175°C Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 250 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 0.6 K/W - SMD version, device on PCB, minimal footprint RthJA - - 62 K/W - SMD version, device on PCB, 6 cm² cooling area3) RthJA - - 40 K/W - 1) See Diagram 3 for more detailed information 2) See Diagram 13 for more detailed information 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.

OptiMOSª3Power-Transistor,30V IPB009N03LG Rev.2.0,2016-04-21Final Data Sheet 3Electricalcharacteristics Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 30 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 1 - 2.2 V VDS=VGS,ID=250µA Zero gate voltage drain current IDSS 0.1 200 µA VDS=30V,VGS=0V,Tj=25°C VDS=30V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.95 0.7 1.3 0.95 mΩ VGS=4.5V,ID=100A VGS=10V,ID=100A Gate resistance RG - 1.5 - Ω - Transconductance gfs 180 370 - S |VDS|>2|ID|RDS(on)max,ID=100A Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 19000 25000 pF VGS=0V,VDS=15V,f=1MHz Output capacitance Coss - 5700 7600 pF VGS=0V,VDS=15V,f=1MHz Reverse transfer capacitance Crss - 360 - pF VGS=0V,VDS=15V,f=1MHz Turn-on delay time td(on) - 26 - ns VDD=15V,VGS=10V,ID=100A, RG,ext=1.6Ω Rise time tr - 14 - ns VDD=15V,VGS=10V,ID=100A, RG,ext=1.6Ω Turn-off delay time td(off) - 103 - ns VDD=15V,VGS=10V,ID=100A, RG,ext=1.6Ω Fall time tf - 22 - ns VDD=15V,VGS=10V,ID=100A, RG,ext=1.6Ω Table6Gatechargecharacteristics1) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 50 - nC VDD=15V,ID=100A,VGS=0to4.5V Gate charge at threshold Qg(th) - 28 - nC VDD=15V,ID=100A,VGS=0to4.5V Gate to drain charge Qgd - 24 - nC VDD=15V,ID=100A,VGS=0to4.5V Switching charge Qsw - 46 - nC VDD=15V,ID=100A,VGS=0to4.5V Gate charge total Qg - 110 146 nC VDD=15V,ID=100A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.9 - V VDD=15V,ID=100A,VGS=0to4.5V Gate charge total Qg - 227 - nC VDD=15V,ID=100A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 95 - nC VDS=0.1V,VGS=0to4.5V Output charge Qoss - 148 - nC VDD=15V,VGS=0V 1) See ″Gate charge waveforms″ for parameter definition

OptiMOSª3Power-Transistor,30V IPB009N03LG Rev.2.0,2016-04-21Final Data Sheet Table7Reversediode Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continuous forward current IS - - 180 A TC=25°C Diode pulse current IS,pulse - - 1260 A TC=25°C Diode forward voltage VSD - 0.82 1 V VGS=0V,IF=100A,Tj=25°C Reverse recovery charge Qrr - 135 - nC VR=15V,IF=IS,diF/dt=400A/µs

OptiMOSª3Power-Transistor,30V IPB009N03LG Rev.2.0,2016-04-21Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 150 200 100 150 200 250 300 Ptot=f(TC) Diagram2:Draincurrent TC[°C] ID[A] 100 150 200 120 160 200 ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea VDS[V] ID[A] 10-1 100 101 102 100 101 102 103 104 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-6 10-5 10-4 10-3 10-2 10-1 100 10-3 10-2 10-1 100 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tp);parameter:D=tp/T

OptiMOSª3Power-Transistor,30V IPB009N03LG Rev.2.0,2016-04-21Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 200 400 600 800 1000 4.5 V 5 V 10 V 4 V 3.5 V 3.2 V 3 V 2.8 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.drain-sourceonresistance ID[A] RDS(on)[mΩ ] 120 160 200 0.0 0.4 0.8 1.2 1.6 2.0 3.2 V 3.5 V 4 V 4.5 V 5 V 6 V 10 V RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics VGS[V] ID[A] 200 400 600 800 1000 175 °C 25 °C ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Diagram8:Typ.forwardtransconductance ID[A] gfs[S] 120 160 200 100 200 300 400 500 gfs=f(ID);Tj=25°C

OptiMOSª3Power-Transistor,30V IPB009N03LG Rev.2.0,2016-04-21Final Data Sheet Diagram9:Drain-sourceon-stateresistance Tj[°C] RDS(on)[mΩ ] -60 -20 100 140 180 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 98 % typ RDS(on)=f(Tj);ID=100A;VGS=10V Diagram10:Typ.gatethresholdvoltage Tj[°C] VGS(th)[V] -60 -20 100 140 180 0.0 0.5 1.0 1.5 2.0 2.5 VGS(th)=f(Tj);VGS=VDS;ID=1mA Diagram11:Typ.capacitances VDS[V] C[pF] 102 103 104 105 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram12:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 2.0 100 101 102 103 104 25 °C 175 °C 25 °C, 98% 175 °C, 98% IF=f(VSD);parameter:Tj

OptiMOSª3Power-Transistor,30V IPB009N03LG Rev.2.0,2016-04-21Final Data Sheet Diagram13:Avalanchecharacteristics tAV[µs] IAV[A] 100 101 102 103 100 101 102 103 25 °C 100 °C 150 °C IAS=f(tAV);RGS=25Ω ;parameter:Tj(start) Diagram14:Typ.gatecharge Qgate[nC] VGS[V] 100 150 200 250 24 V 15 V 6 V VGS=f(Qgate);ID=100Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -60 -20 100 140 180 VBR(DSS)=f(Tj);ID=1mA Gate charge waveforms

OptiMOSª3Power-Transistor,30V IPB009N03LG Rev.2.0,2016-04-21Final Data Sheet 5PackageOutlines Figure1OutlinePG-TO263-7,dimensionsinmm/inches

OptiMOSª3Power-Transistor,30V IPB009N03LG Rev.2.0,2016-04-21Final Data Sheet RevisionHistory IPB009N03L G Revision:2016-04-21,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-04-21 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.