SIHU3N50D VISHAY | Alldatasheet

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www.vishay.com Vishay Siliconix S12-0689-Rev. A, 02-Apr-12 1 Document Number: 91493 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 D Series Power MOSFET

FEATURES

  • O p t i m a l D e s i g n - Low Area Specific On-Resistance - Low Input Capacitance (C iss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS)
  • Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (FOM): R on x Qg - Fast Switching
  • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

  • Consumer Electronics - Displays (LCD or Plasma TV)
  • Server and Telecom Power Supplies - SMPS
  • Industrial - Welding - Induction Heating - Motor Drives
  • Battery Chargers Notes a. Repetitive rating; puls e width limited by maximum junction temperature. b. V DD = 50 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 , IAS = 2.8 A. c. 1.6 mm from case. d. I SD  ID, starting TJ = 25 °C. PRODUCT SUMMARY VDS (V) at TJ max. 550 RDS(on) max. () at 25 °C V GS = 10 V 3.2 Qg (max.) (nC) 20 Qgs (nC) 3 Qgd (nC) 5 Configuration Single N-Channel MOSFET G D S IPAK (TO-251) G D S D

ORDERING INFORMATION

Package IPAK (TO-251) Lead (Pb)-free SiHU3N50D-E3 Lead (Pb)-free and Halogen-free SiHU3N50D-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 500 V Gate-Source Voltage VGS ± 30 Gate-Source Voltage AC (f > 1 Hz) 30 Continuous Drain Current (TJ = 150 °C) V GS at 10 V TC = 25 °C ID 3.0 ATC = 100 °C 1.9 Pulsed Drain Currenta IDM 5.5 Linear Derating Factor 0.56 W/°C Single Pulse Avalanche Energyb EAS 9m J Maximum Power Dissipation P D 104 W Operating Junction and Storage Temperature Range T J, Tstg - 55 to + 150 °C Drain-Source Voltage Slope T J = 125 °C dV/dt 24 V/nsReverse Diode dV/dt (d) 0.22 Soldering Recommendations (Peak Temperature)c for 10 s 300 °C

www.vishay.com Vishay Siliconix S12-0689-Rev. A, 02-Apr-12 2 Document Number: 91493 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes a. Repetitive rating; puls e width limited by maximum junction temperature. b. C oss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS. c. C oss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient R thJA -6 2 °C/WMaximum Junction-to-Case (Drain) R thJC -1 . 8 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDI TIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V DS VGS = 0 V, ID = 250 μA 500 - - V VDS Temperature Coefficient VDS/TJ Reference to 25 °C, I D = 250 μA - 0.56 - V/°C Gate-Source Threshold Voltage (N) V GS(th) VDS = VGS, ID = 250 μA 3 - 5 V Gate-Source Leakage I GSS V GS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current I DSS VDS = 500 V, VGS = 0 V - - 1 μA VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 10 Drain-Source On-State Resistance R DS(on) V GS = 10 V I D = 2.5 A - 2.6 3.2  Forward Transconductancea gfs VDS = 8 V, ID = 1.5 A - 1 - S Dynamic Input Capacitance C iss VGS = 0 V, VDS = 100 V, f = 1 MHz - 175 - pF Output Capacitance C oss -2 1- Reverse Transfer Capacitance C rss -5- Effective Output Capacitance, Energy Related b Co(er) VDS = 0 V to 400 V, VGS = 0 V -2 1- Effective Output Capacitance, Time Related c Co(tr) -2 6- Total Gate Charge Q g VGS = 10 V I D = 1.5 A, VDS = 400 V -6 1 2 nC Gate-Source Charge Q gs -2- Gate-Drain Charge Q gd -3- Turn-On Delay Time t d(on) VDD = 400 V, ID = 1.5 A Rg = 9.1 , VGS = 10 V -1 2 2 4 nsRise Time t r -9 1 8 Turn-Off Delay Time t d(off) -1 1 2 2 Fall Time t f -1 3 2 6 Gate Input Resistance R g f = 1 MHz, open drain - 3.3 -  Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S MOSFET symbol showing the integral reverse P - N junction diode -- 3 A Pulsed Diode Forward Current I SM -- 1 2 Diode Forward Voltage V SD TJ = 25 °C, IS = 1.5 A, VGS = 0 V - - 1.2 V Reverse Recovery Time t rr TJ = 25 °C, IF = IS = 1.5 A, dI/dt = 100 A/μs, VR = 20 V - 293 - ns Reverse Recovery Charge Q rr -0 . 7 4-μ C Reverse Recovery Current I RRM -5- A S D G

www.vishay.com Vishay Siliconix S12-0689-Rev. A, 02-Apr-12 3 Document Number: 91493 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage VDS, Drain-to-Source Voltage (V) ID, Drain-to-Source Current (A) TJ = 25 °CTOP 15 V 14 V 13 V 12 V 11 V 10 V 9 V 6 V 7 V 8 V 0 5 10 15 20 25 30 VDS, Drain-to-Source Voltage (V) ID, Drain-to-Source Current (A) 01 0 2 0 T J = 150 °C 51 5 2 5 3 0 TOP 15 V 14 V 13 V 12 V 11 V 10 V 9.0 V 8.0 V 7.0 V 6.0 V 5.0 V VGS, Gate-to-Source Voltage (V) ID, Drain-to-Source Current (A) 01 0 2 5 51 5 2 0 TJ = 150 °C TJ = 25 °C TJ, Junction Temperature (°C) RDS(on), Drain-to-Source 2.5 0.5 - 60 1.5 - 40 - 20 0 20 40 60 80 100 120 140 160 V GS = 10 V ID = 1.5 A On Resistance (Normalized) 100 1000 0 100 200 300 400 500 VDS, Drain-to-Source Voltage (V) Capacitance (pF) Ciss Coss Crss VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd Qg, Total Gate Charge (nC) VGS, Gate-to-Source Voltage (V) 3 6 9 12 VDS = 400 V VDS = 250 V VDS = 100 V

www.vishay.com Vishay Siliconix S12-0689-Rev. A, 02-Apr-12 4 Document Number: 91493 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10 - Typical Drain-to-Source Voltage vs. Temperature Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case VSD, Source-Drain Voltage (V) ISD, Reverse Drain Current (A) TJ = 150 °C TJ = 25 °C VGS = 0 V 0.01 0.1 100 VDS, Drain-to-Source Voltage (V) ID, Drain Current (A) 0.01 0.1 100 1 10 100 1000 * VGS > minimum VGS at which RDS(on) is specified Operation in this area limited by RDS(on) BVDSS Limited TC = 25 °C TJ = 150 °C Single Pulse 100 μs 1 ms 10 ms Limited by RDS(on)* TJ, Case Temperature (°C) ID, Drain Current (A) 25 50 75 100 125 150 0.5 1.0 1.5 2.0 2.5 3.0 TJ, Junction Temperature (°C) VDS, Drain-to-Source - 60 0 160 Brakdown Voltage (V) - 40 - 20 20 40 60 80 100 120 140 475 500 525 550 575 600 625 0.01 0.1 0.0001 0.001 0.01 0.1 1 Normalized Effective Transient Thermal Impedance Pulse Time (s) Duty Cycle = 0.5 0.1 Single Pulse 0.2 0.02 0.05

www.vishay.com Vishay Siliconix S12-0689-Rev. A, 02-Apr-12 5 Document Number: 91493 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 12 - Switching Time Test Circuit Fig. 13 - Switching Time Waveforms Fig. 14 - Unclamped Inductive Test Circuit Fig. 15 - Unclamped Inductive Waveforms Fig. 16 - Basic Gate Charge Waveform Fig. 17 - Gate Charge Test Circuit Pulse width ≤ 1 µs Duty factor ≤ 0.1 % RD VGS RG D.U.T. 10 V VDS VDD VDS 90 % 10 % VGS td(on) tr td(off) tf RG IAS 0.01 Ωtp D.U.T L VDS - VDD 10 V Vary tp to obtain required IAS IAS VDS VDD VDS tp QGS QGD QG VG Charge 10 V D.U.T. 3 mA VGS VDS IG ID 0.3 µF 0.2 µF 50 kΩ 12 V Current regulator Current sampling resistors Same type as D.U.T.

www.vishay.com Vishay Siliconix S12-0689-Rev. A, 02-Apr-12 6 Document Number: 91493 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 18 - For N-Channel Vishay Siliconix maintains worldwide manufactu ring capability. Products may be manufact ured at one of seve ral qualified locatio ns. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91493. P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = 10 Va ISD Driver gate drive D.U.T. l SD waveform D.U.T. VDS waveform Inductor current D = P.W. Period Peak Diode Recovery dV/dt Test Circuit VDD  dV/dt controlled by Rg  Driver same type as D.U.T.  ISD controlled by duty factor “D”  D.U.T. - device under test D.U.T. Circuit layout considerations  Low stray inductance  Ground plane  Low leakage inductance current transformer Rg Note a. V GS = 5 V for logic level devices VDD

Document Number: 91362 www.vishay.com Revision: 15-Sep-08 1

Package Information

TO-251AA (HIGH VOLTAGE) Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimension are shown in inches and millimeters. outermost extremes of the plastic body. 4. Thermal pad contour optional with dimensions b4, L2, E1 and D1. 5. Lead dimension uncontrolled in L3. 6. Dimension b1, b3 and c1 apply to base metal only. 7. Outline conforms to JEDEC outline TO-251AA. Base metal Plating b1, b3 (b, b2) c1(c) Section B - B and C - C D A c Lead tip (Datum A) Thermal PAD View A - A A A C Seating plane C C B B θ1θ2 B L 3 x b2 3 x b E 2 x e

0.010 C B M

A 0.25 0.010 B A 0.25 A CM MILLIMETERS INCHES MILLIMETERS INCHES c1 0.41 0.56 0.016 0.022 θ1 0' 15' 0' 15' c2 0.46 0.86 0.018 0.034 θ2 25' 35' 25' 35' D 5.97 6.22 0.235 0.245 ECN: S-82111-Rev. A, 15-Sep-08 DWG: 5968

www.vishay.com Vishay Revision: 12-Mar-12 1 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain type s of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. Parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. All operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vish ay’s terms and condit ions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicate d in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vi shay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certi fies that all its products that are id entified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The Euro pean Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.