IPA90R500C3 ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark1 iscN-ChannelMOSFETTransistor IPA90R500C3,IIPA90R500C3
- FEATURES
- Drain-source on-resistance: RDS(on)≤0.5Ω@10V
- FastSwitching Speed
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- DESCRITION
- Highfastswitching Power Supply
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 900 V VGS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous 11 A IDM DrainCurrent-SinglePulsed 24 A PD TotalDissipation@TC=25℃ 34 W Tj Max.OperatingJunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 3.7 ℃/W
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark2 iscN-ChannelMOSFETTransistor IPA90R500C3,IIPA90R500C3 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=250μA 900 V VGS(th) GateThresholdVoltage VDS=VGS;ID=0.74mA 2.5 3.5 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=6.6A 0.5 Ω IGSS Gate-SourceLeakageCurrent VGS=20V;VDS=0V 100 nA IDSS Drain-SourceLeakageCurrent VDS=900V;VGS=0V 1 μA VDS=900V;VGS=0V;Tj=150℃ 10 VSD Diodeforwardvoltage IDR =6.6A,VGS =0V 0.9 1.2 V