IPA80R310CE ISC | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscN-ChannelMOSFETTransistor IPA80R310CE
- FEATURES
- WithTO-220Fpackaging
- Withlowgatedrive requirements
- Easytodrive
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 800 V VGSS Gate-SourceVoltage ±30 V ID DrainCurrent-Continuous;@Tc=25℃ Tc=100℃ 16.7 10.6 A IDM DrainCurrent-SinglePulsed 51 A PD TotalDissipation 35 W Tj OperatingJunctionTemperature -40~150 ℃ Tstg StorageTemperature -40~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 3.6 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscN-ChannelMOSFETTransistor IPA80R310CE ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=0.25mA 800 V VGS(th) GateThresholdVoltage VDS=VGS;ID=1mA 2.1 3.9 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=11A 250 310 mΩ IGSS Gate-SourceLeakageCurrent VGS= ±20V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakageCurrent VDS=800V;VGS=0V;@Tc=25℃ Tc=150℃ 250 μA VSDF Diodeforwardvoltage ISD=16.7A,VGS =0V 1.0 V