IPA65R065C7 ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 IscN-ChannelMOSFETTransistor IPA65R065C7
- FEATURES
- WithTO-220Fpackage
- Lowinputcapacitanceandgate charge
- Reducedswitchingand conductionlosses
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 650 V VGSS Gate-SourceVoltage ±30 V ID DrainCurrent-Continuous@Tc=25℃ (VGS at10V) Tc=100℃ 9 A IDM DrainCurrent-SinglePulsed 145 A PD TotalDissipation@TC=25℃ 34 W Tj Max.OperatingJunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 3.7 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 80 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 IscN-ChannelMOSFETTransistor IPA65R065C7 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=1mA 650 V VGS(th) GateThresholdVoltage VDS=VGS;ID=0.85mA 2.5 3.5 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=17.1A 58 65 mΩ IGSS Gate-SourceLeakageCurrent VGS=±20V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakageCurrent VDS=650V;VGS=0V;Tj=25℃ VDS=650V;VGS=0V;Tj=150℃ 100 μA VSDF Diodeforwardvoltage ISD=17.1A,VGS =0V 0.9 V