IPA50R350CP ISC | Alldatasheet

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Technical content

iscN-ChannelMOSFETTransistor IPA50R350CP www.iscsemi.com 1

FEATURES

  • DrainCurrent-ID=10A@TC=25℃
  • DrainSource Voltage-VDSS=500V(Min)
  • Static Drain-Source On-Resistance -RDS(on) =0.35Ω(Max)@VGS=-10V

DESCRIPTION

  • SwitchModePowerSupply (SMPS)
  • UninterruptiblePowerSupply (UPS)
  • PowerFactorCorrection (PFC) ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMALCHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 500 V VGS Gate-SourceVoltage-Continuous ±20 V ID ContinuousDrainCurrent 10 A IDM DrainCurrent(Pulse) 22 A PD TotalDissipation@TC=25℃ 32 W TJ Max. OperatingJunctionTemperature -55-150 ℃ Tstg StorageTemperature -55-150 ℃ SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 3.9 ℃/W 123 TO-220Fpackage Pin1.Gate 2.Drain 3.Source

iscN-ChannelMOSFETTransistor IPA50R350CP www.iscsemi.com 2 ELECTRICALCHARACTERISTICS（TC=25℃ unless otherwisespecified） SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)DSS Drain-SourceBreakdownVoltage VGS=0;ID=0.25mA 500 -- -- V VGS(th) GateThresholdVoltage VDS=10V;ID=0.37mA 2.5 -- 3.5 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=5.6A -- -- 0.35 Ω IGSS Gate-BodyLeakageCurrent VGS= ±20V;VDS=0 -- -- ±100 nA IDSS ZeroGateVoltageDrainCurrent VDS=500V;VGS=0 -- -- 1 uA Ciss InputCapacitance VGS =0V, VDS =100V, f=1.0MHz -- 871 -- pFCoss OutputCapacitance -- 37 -- Crss ReverseTransferCapacitance -- 5 -- Qg TotalGateCharge VDD =400V, ID =5.6A, VGS =10V -- 22 -- nCQgs Gate-SourceCharge -- 4 -- Qgd Gate-DrainCharge -- 8 -- td(on) Turn-onDelayTime VDD =400V, ID =5.6A, VGS =10V, RG =25Ω -- 70 -- ns tr Turn-onRiseTime -- 70 -- td(off) Turn-offDelayTime -- 145 -- tf Turn-offFallTime -- 59 -- Drain-SourceBodyDiodeCharacteristics ISD ContinuousSourceCurrent Tc =25ºC -- -- 5.6 A ISM Pulsed SourceCurrent -- -- 22 VSD DiodeForwardVoltage ISD=5.6A,VGS=0V -- -- 1.2 V trr ReverseRecoveryTime VR =400V,IF =IS, diF/dt=100A/μs -- 377 -- us Qrr ReverseRecoveryCharge -- 3.4 -- uC VSD ForwardOn-Voltage IS=5.6A;VGS=0 -- -- 1.2 V

iscN-ChannelMOSFETTransistor IPA50R350CP www.iscsemi.com 3 PRODUCTDISCLAIMER ISCreserves the rights tomakechangesof thecontent hereinthe datasheetatany timewithout notification.The informationcontained hereinis presentedonly as aguidefortheapplications ofour products. ISCproducts are intendedforusagein generalelectronic equipment.Theproducts are notdesigned for usein equipmentwhichrequire specialized qualityand/or reliability,orin equipment whichcould have applications inhazardous environments,aerospaceindustry,or medicalfield.Pleasecontactusif you intend ourproducts tobe used inthese specialapplications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaimsany and allliability,includingwithout limitation special,consequential orincidental damages. Itis strictlyprohibitedto reprintorcopy partorallof thisdatasheetwithoutpermission fromISC.