IPA093N06N3 ISC | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 IscN-ChannelMOSFETTransistor IPA093N06N3
- FEATURES
- WithTO-220Fpackage
- Lowinputcapacitanceandgate charge
- Lowgateinputresistance
- Reducedswitchingand conductionlosses
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 60 V VGSS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous@Tc=25℃ (VGS at10V) Tc=100℃ 31 A IDM DrainCurrent-SinglePulsed 172 A PD TotalDissipation@TC=25℃ 33 W Tj Max.OperatingJunctionTemperature 175 ℃ Tstg StorageTemperature -55~175 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 4.6 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 65 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 IscN-ChannelMOSFETTransistor IPA093N06N3 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=1mA 60 V VGS(th) GateThresholdVoltage VDS=VGS;ID=0.034mA 2.0 4.0 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=40A 7.8 9.3 mΩ IGSS Gate-SourceLeakageCurrent VGS= ±20V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakage Current VDS=60V;VGS=0V;Tj=25℃ VDS=60V;VGS=0V;Tj=150℃ 100 μA VSDF Diodeforwardvoltage ISD=40A,VGS =0V 1.2 V