IPA041N04NG INFINEON | Alldatasheet

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MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª3Power-Transistor,40V IPA041N04NG DataSheet Rev.2.0 Final PowerManagement&Multimarket

OptiMOSª3Power-Transistor,40V IPA041N04NG Rev.2.0,2014-03-12Final Data Sheet TO-220-FP Drain Pin 2 Gate Pin 1 Source Pin 3 1Description

Features

  • OptimizedtechnologyforDC/DCconverters
  • QualifiedaccordingtoJEDEC1)fortargetapplications
  • N-channel,normallevel
  • ExcellentgatechargexRDS(on)product(FOM)
  • Verylowon-resistanceRDS(on)
  • 100%Avalanchetested
  • Pb-freeplating;RoHScompliant
  • Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 40 V RDS(on),max 4.1 mΩ ID 70 A Type/OrderingCode Package Marking RelatedLinks IPA041N04N G PG-TO220-FP 041N04N - 1) J-STD20 and JESD22

OptiMOSª3Power-Transistor,40V IPA041N04NG Rev.2.0,2014-03-12Final Data Sheet TableofContents

OptiMOSª3Power-Transistor,40V IPA041N04NG Rev.2.0,2014-03-12Final Data Sheet 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings at 25 °C Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current ID

49 A VGS=10V,TC=25°C

VGS=10V,TC=100°C Pulsed drain current 1) ID,pulse - - 280 A TC=25°C Avalanche current, single pulse 2) IAS - - 70 A TC=25°C Avalanche energy, single pulse EAS - - 70 mJ ID=70A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 35 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 3Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 4.3 K/W - SMD version, device on PCB, minimal footprint RthJA - - 62 K/W - SMD version, device on PCB, 6 cm² cooling area 3) RthJA - - 40 K/W - 1) See figure 3 for more detailed information 2) See figure 13 for more detailed information 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.

OptiMOSª3Power-Transistor,40V IPA041N04NG Rev.2.0,2014-03-12Final Data Sheet 4Electricalcharacteristics Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 40 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2 - 4 V VDS=VGS,ID=45µA Zero gate voltage drain current IDSS 0.1 100 µA VDS=40V,VGS=0V,Tj=25°C VDS=40V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance 1) RDS(on) - 3.5 4.1 mΩ VGS=10V,ID=70A Gate resistance RG - 1.6 2.4 Ω - Transconductance gfs 48 96 - S |VDS|>2|ID|RDS(on)max,ID=70A Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 3400 4500 pF VGS=0V,VDS=20V,f=1MHz Output capacitance Coss - 980 1300 pF VGS=0V,VDS=20V,f=1MHz Reverse transfer capacitance Crss - 36 72 pF VGS=0V,VDS=20V,f=1MHz Turn-on delay time td(on) - 16 - ns VDD=20V,VGS=10V,ID=30A, RG,ext=1.6Ω Rise time tr - 3.8 - ns VDD=20V,VGS=10V,ID=30A, RG,ext=1.6Ω Turn-off delay time td(off) - 23 - ns VDD=20V,VGS=10V,ID=30A, RG,ext=1.6Ω Fall time tf - 4.8 - ns VDD=20V,VGS=10V,ID=30A, RG,ext=1.6Ω Table6Gatechargecharacteristics2) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 18 - nC VDD=20V,ID=30A,VGS=0to10V Gate charge at threshold Qg(th) - 10.3 - nC VDD=20V,ID=30A,VGS=0to10V Gate to drain charge Qgd - 5.3 - nC VDD=20V,ID=30A,VGS=0to10V Switching charge Qsw - 12.5 - nC VDD=20V,ID=30A,VGS=0to10V Gate charge total Qg - 42 56 nC VDD=20V,ID=30A,VGS=0to10V Gate plateau voltage Vplateau - 5.1 - V VDD=20V,ID=30A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 40 - nC VDS=0.1V,VGS=0to10V Output charge Qoss - 41 - nC VDD=20V,VGS=0V 1) Measured from drain tab to source pin 2) See ″Gate charge waveforms″ for parameter definition

OptiMOSª3Power-Transistor,40V IPA041N04NG Rev.2.0,2014-03-12Final Data Sheet Table7Reversediode Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continuous forward current IS - - 29 A TC=25°C Diode pulse current IS,pulse - - 280 A TC=25°C Diode forward voltage VSD - 0.87 1.2 V VGS=0V,IF=29A,Tj=25°C Reverse recovery charge Qrr - 19 - nC VR=20V,IF=29A,diF/dt=400A/µs

OptiMOSª3Power-Transistor,40V IPA041N04NG Rev.2.0,2014-03-12Final Data Sheet 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 150 200 Ptot=f(TC) Diagram2:Draincurrent TC[°C] ID[A] 100 150 200 ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea VDS[V] ID[A] 10-1 100 101 102 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-6 10-5 10-4 10-3 10-2 10-1 100 101 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tp);parameter:D=tp/T

OptiMOSª3Power-Transistor,40V IPA041N04NG Rev.2.0,2014-03-12Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 100 150 200 7 V 10 V 6.5 V 6 V 5.5 V 5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.drain-sourceonresistance ID[A] RDS(on)[mΩ ] 100 150 200 5.5 V 6 V 6.5 V 7 V

10 V10 V

RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics VGS[V] ID[A] 100 150 200 175 °C 25 °C ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Diagram8:Typ.forwardtransconductance ID[A] gfs[S] 100 100 120 gfs=f(ID);Tj=25°C

OptiMOSª3Power-Transistor,40V IPA041N04NG Rev.2.0,2014-03-12Final Data Sheet Diagram9:Drain-sourceon-stateresistance Tj[°C] RDS(on)[mΩ ] -60 -20 100 140 180 max typ RDS(on)=f(Tj);ID=70A;VGS=10V Diagram10:Typ.gatethresholdvoltage Tj[°C] VGS(th)[V] -60 -20 100 140 180 VGS(th)=f(Tj);VGS=VDS;ID=45µA Diagram11:Typ.capacitances VDS[V] C[pF] 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram12:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 2.0 100 101 102 103 25 °C 175 °C 25 °C, max 175 °C, max IF=f(VSD);parameter:Tj

OptiMOSª3Power-Transistor,40V IPA041N04NG Rev.2.0,2014-03-12Final Data Sheet Diagram13:Avalanchecharacteristics tAV[µs] IAV[A] 10-1 100 101 102 103 100 101 102 25 °C 100 °C 150 °C IAS=f(tAV);RGS=25Ω ;parameter:Tj(start) Diagram14:Typ.gatecharge Qgate[nC] VGS[V] 32 V 20 V 8 V VGS=f(Qgate);ID=30Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -60 -20 100 140 180 VBR(DSS)=f(Tj);ID=1mA Gate charge waveforms

OptiMOSª3Power-Transistor,40V IPA041N04NG Rev.2.0,2014-03-12Final Data Sheet 6PackageOutlines Figure1OutlinePG-TO220-FP,dimensionsinmm/inches

OptiMOSª3Power-Transistor,40V IPA041N04NG Rev.2.0,2014-03-12Final Data Sheet RevisionHistory IPA041N04N G Revision:2014-03-12,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-03-12 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.