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Technical content

Features

  • Ideal for high frequency switching and sync. rec.
  • Optimized technology for DC/DC converters
  • Excellent gate charge x R DS(on) product (FOM)
  • Very low on-resistance RDS(on)
  • N-channel, normal level
  • 100% avalanche tested
  • Pb-free plating; RoHS compliant
  • Qualified according to JEDEC1) for target applications
  • Halogen-free according to IEC61249-2-21 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C 84 A T C=100 °C 60 Pulsed drain current2) I D,pulse T C=25 °C 336 Avalanche energy, single pulse3) E AS I D=100 A, R GS=25 W 235 mJ Gate source voltage V GS ±20 V Power dissipation P tot T C=25 °C 41 W Operating and storage temperature T j, T stg -55 ... 175 °C IEC climatic category; DIN IEC 68-1 55/175/56 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Value 1)J-STD20 and JESD22 VDS 60 V RDS(on),max 3.2 mW ID 84 A Product Summary Type IPA032N06N3 G Marking 032N06N Rev. 2.0 page 1 2013-08-27

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 3.7 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 60 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=118 µA 2 3 4 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V, T j=25 °C - 0.1 1 µA V DS=60 V, V GS=0 V, T j=125 °C - 10 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=80 A - 2.6 3.2 mW Gate resistance R G - 1.3 - W Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=80 A 68 135 - S Values 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.0 page 2 2013-08-27

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 10000 13000 pF Output capacitance C oss - 2200 2900 Reverse transfer capacitance C rss - 73 - Turn-on delay time t d(on) - 35 - ns Rise time t r - 120 - Turn-off delay time t d(off) - 62 - Fall time t f - 20 - Gate Charge Characteristics5) Gate to source charge Q gs - 51 - nC Gate to drain charge Q gd - 11 - Switching charge Q sw - 32 - Gate charge total Q g - 124 165 Gate plateau voltage V plateau - 5.1 - V Output charge Q oss V DD=30 V, V GS=0 V - 100 134 nC Reverse Diode Diode continous forward current I S - - 84 A Diode pulse current I S,pulse - - 336 Diode forward voltage V SD V GS=0 V, I F=80 A, T j=25 °C - 0.9 1.2 V Reverse recovery time t rr - 89 - ns Reverse recovery charge Q rr - 82 - nC 5) See figure 16 for gate charge parameter definition VR=30 V, IF=120A, diF/dt=100 A/µs T C=25 °C Values V GS=0 V, V DS=30 V, f =1 MHz V DD=30 V, V GS=10 V, I D=120 A, R G,ext=3.5 W V DD=30 V, I D=80 A, V GS=0 to 10 V Rev. 2.0 page 3 2013-08-27

1 Power dissipation 2 Drain current

P tot=f(T C) I D=f(T C); V GS≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 10 ms DC 10-1 100 101 102 100 101 102 103 ID [A] VDS [V] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10-5 10-4 10-3 10-2 10-1 100 101 10-2 10-1 100 101 ZthJC [K/W] tp [s] 0 50 100 150 200 Ptot [W] TC [°C] 100 0 50 100 150 200 ID [A] TC [°C] Rev. 2.0 page 4 2013-08-27

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 5 V 5.5 V 6 V 7 V 10 V 0 50 100 150 200 250 300 RDS(on) [mW] ID [A] 25 °C 175 °C 100 150 200 250 300 0 2 4 6 ID [A] VGS [V] 120 160 200 0 50 100 150 gfs [S] ID [A] 4.5 V 5 V 5.5 V 6 V

7 V 10 V

ID [A] VDS [V] Rev. 2.0 page 5 2013-08-27

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=80 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ max -60 -20 20 60 100 140 180 RDS(on) [mW] Tj [°C] 118 µA 1180 µA 0.5 1.5 2.5 3.5 -60 -20 20 60 100 140 180 VGS(th) [V] Tj [°C] Ciss Coss Crss 101 102 103 104 105 0 20 40 60 C [pF] VDS [V] 25 °C 175 °C 25 °C, max 175 °C, max 100 101 102 103 0 0.5 1 1.5 2 IF [A] VSD [V] Rev. 2.0 page 6 2013-08-27

13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=80 A pulsed parameter: T j(start) parameter: V DD

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA 12 V 30 V 48 V 0 50 100 150 VGS [V] Qgate [nC] -60 -20 20 60 100 140 180 VBR(DSS) [V] Tj [°C] V GS Q gate V gs(th) Qg(th) Qgs Qgd Qsw Qg 25 °C 100 °C 150 °C 101 102 1 10 100 1000 IAS [A] tAV [µs] Rev. 2.0 page 7 2013-08-27

Rev. 2.0 page 8 2013-08-27

81726 Munich, Germany

© 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 9 2013-08-27