IMZA75R090M1H INFINEON | Alldatasheet

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Technical content

Features

  • Highlyrobust750Vtechnology,100%avalanchetested
  • Best-in-classRDS(on)xQfr
  • ExcellentRDS(on)xQossandRDS(on)xQG
  • UniquecombinationoflowCrss/CissandhighVGS(th)
  • Infineonproprietarydieattachtechnology
  • Driversourcepinavailable Benefits
  • Enhancedrobustnessandreliabilityforbusvoltagesbeyond500V
  • Superiorefficiencyinhardswitching
  • Higherswitchingfrequencyinsoftswitchingtopologies
  • Robustnessagainstparasiticturnonforunipolargatedriving
  • Reducedswitchinglossesthroughimprovedgatecontrol Potentialapplications
  • EVcharginginfrastructure
  • SolarPVinverters
  • UPS(uninterruptablepowersupplies)
  • Energystorageandbatteryformation
  • TelecomandServerSMPS Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Pleasenote:Thesourceanddriversourcepinsarenotexchangeable. Theirexchangemightleadtomalfunction. Table1KeyPerformanceParameters Parameter Value Unit VDSSoverfullTj,range 750 V RDS(on),typ 90 mΩ RDS(on),max 117 mΩ QG,typ 15 nC IDM,max 60 A Qoss,typ@500V 39 nC Eoss,typ@500V 6.9 µJ Type/OrderingCode Package Marking RelatedLinks IMZA75R090M1H PG-TO247-4 75R090M1 see Appendix A

CoolSiCªPowerDevice750VG1 IMZA75R090M1H Rev.2.0,2024-01-30Final Data Sheet TableofContents

CoolSiCªPowerDevice750VG1 IMZA75R090M1H Rev.2.0,2024-01-30Final Data Sheet 1Maximumratings atTj=25°C,unlessotherwisespecified. Note: for optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet. Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous DC drain current1) IDDC

16 A TC=25°C

TC=100°C Peak drain current2) IDM - - 60 A TC=25°C,VGS=18V Avalanche energy, single pulse EAS - - 75 mJ ID=2.8A,VDD=50V;seetable11 Avalanche energy, repetitive pulse EAR - - 0.37 mJ ID=2.8A,VDD=50V;seetable11 Avalanche current, single pulse IAS - - 2.8 A - MOSFETdv/dtruggedness dv/dt - - 200 V/ns VDS=0...500V Gate source voltage (static) VGS -5 - 23 V - Gate source voltage (transient) VGS -10 - 25 V tp≤500ns,dutycycle≤1% Power dissipation Ptot - - 113 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 175 °C - Mounting torque - - - 60 Ncm M3 and M3.5 screws Continuous reverse drain current1) ISDC

15 A VGS=18V,TC=25°C

VGS=0V,TC=25°C Peak reverse drain current2) ISM

19 A TC=25°C,tp≤250ns

TC=25°C Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min 1)LimitedbyTJ,max 2)PulsewidthtplimitedbyTj,max

CoolSiCªPowerDevice750VG1 IMZA75R090M1H Rev.2.0,2024-01-30Final Data Sheet 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case Rth(j-c) - - 1.33 °C/W Not subject to production test. Parameter verified by design/characterization according to JESD51-14. Soldering temperature, wave soldering only allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s 3Operatingrange Table4Operatingrange Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate-source voltage operating range including undershoots1) VGS -2 - 20 V - Recommended turn-on voltage VGS(on) - 18 - V - Recommended turn-off voltage VGS(off) - 0 - V - 1)Importantnotice:Ifthegatesourcevoltageofthedeviceinapplicationexceedstheoperatingrange(Table4),thedevice RDS(on)andVGS(th)mightexceedthemaximumvaluestatedinthedatasheetattheendofthelifetimeofthedevice.Inorderto ensure sound operation of the device over the planned lifetime, the maximum ratings (Table 2) and the application note AN2018-09 must be considered.

CoolSiCªPowerDevice750VG1 IMZA75R090M1H Rev.2.0,2024-01-30Final Data Sheet 4Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table5Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source voltage1) VDSS 750 - - V VGS=0V,ID=0.26mA, Tj=-55°Cto175°C Gate threshold voltage2) VGS(th) 3.5 4.3 5.6 V VDS=VGS,ID=2.6mA Zero gate voltage drain current IDSS - µA VDS=750V,VGS=0V,Tj=25°C VDS=750V,VGS=0V,Tj=175°C Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 111 162 117 mΩ VGS=15V,ID=7.4A,Tj=25°C VGS=18V,ID=7.4A,Tj=25°C VGS=20V,ID=7.4A,Tj=25°C VGS=18V,ID=7.4A,Tj=175°C Internal gate resistance RG,int - 8 - Ω f=1MHz Table6Dynamiccharacteristics External parasitic elements (PCB layout) influence switching behavior significantly. Stray inductances and coupling capacitances must be minimized. For layout recommendations please use provided application notes or contact Infineon sales office. Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 542 - pF VGS=0V,VDS=500V,f=250kHz Reverse transfer capacitance Crss - 3.2 - pF VGS=0V,VDS=500V,f=250kHz Output capacitance3) Coss - 43 56 pF VGS=0V,VDS=500V,f=250kHz Output charge3) Qoss - 39 50 nC calculationbasedonCoss Effective output capacitance, energy related4) Co(er) - 56 - pF VGS=0V, VDS=0...500V Effective output capacitance, time related5) Co(tr) - 78 - pF ID=constant,VGS=0V, VDS=0...500V Turn-on delay time td(on) - 6 - ns VDD=500V,VGS=18V,ID=7.4A, RG=1.8Ω ;seetable10 Rise time tr - 7 - ns VDD=500V,VGS=18V,ID=7.4A, RG=1.8Ω ;seetable10 Turn-off delay time td(off) - 13 - ns VDD=500V,VGS=18V,ID=7.4A, RG=1.8Ω ;seetable10 Fall time tf - 10 - ns VDD=500V,VGS=18V,ID=7.4A, RG=1.8Ω ;seetable10 1)TestedatTj=25°C,minimumVDSSverifiedbydesignoverfulljunctiontemperaturerange. 2) Tested after 1 ms pulse at VGS = +20 V. “Linear mode” operation is not recommended. For assessment of potential “linear mode” operation, please contact Infineon sales office. 3) Maximum specification is defined by calculated six sigma upper confidence bound. 4)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to500V. 5)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to500V.

CoolSiCªPowerDevice750VG1 IMZA75R090M1H Rev.2.0,2024-01-30Final Data Sheet Table7Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Plateau gate to source charge QGS(pl) - 4.3 - nC VDD=500V,ID=7.4A, VGS=0to18V Gate to drain charge QGD - 3.5 - nC VDD=500V,ID=7.4A, VGS=0to18V Total gate charge QG - 15 - nC VDD=500V,ID=7.4A, VGS=0to18V Table8Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source reverse voltage VSD - 3.9 5.3 V VGS=0V,IS=7.4A,Tj=25°C MOSFET forward recovery time tfr - ns VDD=500V,IS=7.4A, diS/dt=1000A/µs;seetable9 VDD=500V,IS=7.4A, diS/dt=4000A/µs;seetable9 MOSFET forward recovery charge1) Qfr - nC VDD=500V,IS=7.4A, diS/dt=1000A/µs;seetable9 VDD=500V,IS=7.4A, diS/dt=4000A/µs;seetable9 MOSFET peak forward recovery current Ifrm - A VDD=500V,IS=7.4A, diS/dt=1000A/µs;seetable9 VDD=500V,IS=7.4A, diS/dt=4000A/µs;seetable9 1)QfrincludesQoss

CoolSiCªPowerDevice750VG1 IMZA75R090M1H Rev.2.0,2024-01-30Final Data Sheet 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 175 100 125 Ptot=f(TC) Diagram2:Safeoperatingarea VDS[V] IDS[A] 100 101 102 103 10-3 10-2 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms 10 ms DC IDS=f(VDS); TC=25 °C; D=0; parameter: tp Diagram3:Safeoperatingarea VDS[V] IDS[A] 100 101 102 103 10-3 10-2 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms 10 ms DC IDS=f(VDS); TC=80 °C; D=0; parameter: tp Diagram4:Max.transientthermalimpedance tp[s] Zth(j-c),max[K/W] 10-6 10-5 10-4 10-3 10-2 10-1 10-2 10-1 100 101 0.5 0.2 0.05 0.1 0.01 single pulse 0.02 Zth(j-c),max=f(tP); parameter: D=tp/T

CoolSiCªPowerDevice750VG1 IMZA75R090M1H Rev.2.0,2024-01-30Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] IDS[A] 100 20 V 18 V 15 V 12 V 10 V 8 V IDS=f(VDS); Tj=25 °C; parameter: VGS Diagram6:Typ.outputcharacteristics VDS[V] IDS[A] 20 V 18 V 15 V 12 V 10 V 8 V IDS=f(VDS); Tj=175 °C; parameter: VGS Diagram7:Typ.drain-sourceon-stateresistance IDS[A] RDS(on)[Ω ] 0.100 0.150 0.200 0.250 0.300 18 V 20 V 15 V 12 V 10 V RDS(on)=f(IDS); Tj=125 °C; parameter: VGS Diagram8:Drain-sourceon-stateresistance Tj[°C] RDS(on)[normalized] -50 -25 100 125 150 175 0.5 1.0 1.5 2.0 RDS(on)=f(Tj); ID=7.4 A; VGS=18 V

CoolSiCªPowerDevice750VG1 IMZA75R090M1H Rev.2.0,2024-01-30Final Data Sheet Diagram9:Typ.transfercharacteristics VGS[V] IDS[A] 100 175 °C 25 °C IDS=f(VGS); VDS=20 V; parameter: Tj Diagram10:Typ.gatecharge QG[nC] VGS[V] 500 V VGS=f(QG); ID=7.4 A pulsed; parameter: VDD Diagram11:Typ.reversedraincurrentcharacteristics VSD[V] ISD[A] 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 10-1 100 101 102 175 °C 25 °C ISD=f(VSD); VGS=0 V; parameter: Tj Diagram12:Typ.reversedraincurrentcharacteristics VSD[V] ISD[A] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10-1 100 101 102 25 °C 175 °C ISD=f(VSD); VGS=18 V; parameter: Tj

CoolSiCªPowerDevice750VG1 IMZA75R090M1H Rev.2.0,2024-01-30Final Data Sheet Diagram13:Avalancheenergy Tj[°C] EAS[mJ] 100 125 150 175 EAS=f(Tj); ID=2.8 A; VDD=50 V Diagram14:Drain-sourcebreakdownvoltage Tj[°C] VDSS[V] -50 -25 100 125 150 175 750 760 770 780 790 800 810 VDSS=f(Tj); ID=0.26 mA Diagram15:Typ.capacitances VDS[V] C[pF] 100 200 300 400 500 600 100 101 102 103 104 Ciss Coss Crss C=f(VDS); VGS=0 V; f=250 kHz Diagram16:Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 200 300 400 500 600 Eoss=f(VDS)

CoolSiCªPowerDevice750VG1 IMZA75R090M1H Rev.2.0,2024-01-30Final Data Sheet Diagram17:Typ.Qossoutputcharge VDS[V] Qoss[nC] 100 200 300 400 500 600 Qoss=f(VDS)

CoolSiCªPowerDevice750VG1 IMZA75R090M1H Rev.2.0,2024-01-30Final Data Sheet 6TestCircuits Table9Bodydiodecharacteristics Test circuit for body diode characteristics Body diode recovery waveform RG1 RG2 IS VDS Qfr tfr Ifrm Ifrm Is dIs / dtVDD ISO VDD VDS IS Table10Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS RG VDD Table11Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform VDS VDSS ID VDS ID VDS VDD

CoolSiCªPowerDevice750VG1 IMZA75R090M1H Rev.2.0,2024-01-30Final Data Sheet 7PackageOutlines DIMENSIONSMIN.MAX.MILLIMETERSPG-TO247-4-U02PACKAGE - GROUPNUMBER: cDD1D2 AA1bA2 0.5820.9016.251.05 0.65 4.902.311.101.90 0.6616.8521.101.35 0.79 5.102.511.302.10A3b3b2 D3D4 24.9725.274.905.10 5.08 Q E2EeLN SøP 5.60 2.4015.70 3.5019.80 13.10 6.00 2.6013.50 3.70 15.90 20.10øP17.007.40 2.79e1e2 øP2TU 2.54 MIN.MAX.DIMENSIONSMILLIMETERS Figure1OutlinePG-TO247-4,dimensionsinmm

CoolSiCªPowerDevice750VG1 IMZA75R090M1H Rev.2.0,2024-01-30Final Data Sheet 8AppendixA Table12RelatedLinks

  • IFXCoolSiCªPowerDevice750VG1Webpage:www.infineon.com
  • IFXCoolSiCªPowerDevice750VG1applicationnote:www.infineon.com
  • IFXCoolSiCªPowerDevice750VG1simulationmodel:www.infineon.com
  • IFXDesigntools:www.infineon.com

CoolSiCªPowerDevice750VG1 IMZA75R090M1H Rev.2.0,2024-01-30Final Data Sheet RevisionHistory IMZA75R090M1H Revision:2024-01-30,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2024-01-30 Release of final version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2023InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.