IMZA65R020M2H INFINEON | Alldatasheet

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Technical content

Features

  • Ultra-lowswitchinglosses
  • Benchmarkgatethresholdvoltage,VGS(th)=4.5V
  • Robustagainstparasiticturn-onevenwith0Vturn-offgatevoltage
  • Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme
  • Robustbodydiodeoperationunderhardcommutationevents
  • .XTinterconnectiontechnologyforbest-in-classthermalperformance Benefits
  • Enableshighefficiencyandhighpowerdensitydesigns
  • Facilitatesgreateaseofuseandintegration
  • ProvidesthebestpriceperformanceratiocomparedtoIndustry’smost ambitiousroadmaps
  • Reducesthesize,weightandbillofmaterialsofthesystems
  • Enhancessystemrobustnessandreliability Potentialapplications
  • SMPS
  • SolarPVinverters
  • Energystorageandbatteryformation
  • UPS
  • EVcharginginfrastructure
  • Motordrives Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Pleasenote:Thesourceanddriversourcepinsarenotexchangeable. Theirexchangemightleadtomalfunction. Table1KeyPerformanceParameters Parameter Value Unit VDSSoverfullTj,range 650 V RDS(on),typ 20 mΩ RDS(on),max 24 mΩ QG,typ 57 nC ID,pulse 291 A Qoss@400V 108 nC Eoss@400V 14.7 µJ Type/OrderingCode Package Marking RelatedLinks IMZA65R020M2H PG-TO247-4 65R020M2 see Appendix A

CoolSiCªMOSFET650VG2 IMZA65R020M2H Rev.2.2,2024-03-05Final Data Sheet TableofContents

CoolSiCªMOSFET650VG2 IMZA65R020M2H Rev.2.2,2024-03-05Final Data Sheet 1Maximumratings atTj=25°C,unlessotherwisespecified. Note: for optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet. Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous DC drain current1) IDDC

58 A TC=25°C

TC=100°C Peak drain current2) IDM - - 291 A TC=25°C,VGS=18V Avalanche energy, single pulse EAS - - 272 mJ ID=10.2A,VDD=50V;seetable11 Avalanche energy, repetitive EAR - - 1.36 mJ ID=10.2A,VDD=50V;seetable11 Avalanche current, single pulse IAS - - 10.2 A - MOSFETdv/dtruggedness dv/dt - - 200 V/ns VDS=0...400V Gate source voltage (static)3) VGS -7 - 23 V - Gate source voltage (transient) VGS -10 - 25 V tp≤500ns,dutycycle≤1% Power dissipation Ptot - - 273 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 175 °C - Mounting torque - - - 60 Ncm M3 and M3.5 screws Continuous reverse drain current1) ISDC

52.3 A VGS=18V,TC=25°C

VGS=0V,TC=25°C Peak reverse drain current2) ISM 291

88 A TC=25°C,tp≤250ns

TC=25°C Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min 1)LimitedbyTJ,max 2)PulsewidthtpulselimitedbyTj,max. 3) The maximum gate-source voltage in the application design should be in accordance to IPC-9592B.

CoolSiCªMOSFET650VG2 IMZA65R020M2H Rev.2.2,2024-03-05Final Data Sheet 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case Rth(j-c) - - 0.55 °C/W Not subject to production test. Parameter verified by design/characterization according to JESD51-14. Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6 mm (0.063 in.) from case for 10 s 3Operatingrange Table4Operatingrange Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Recommended turn-on voltage VGS(on) - 18 - V - Recommended turn-off voltage VGS(off) - 0 - V -

CoolSiCªMOSFET650VG2 IMZA65R020M2H Rev.2.2,2024-03-05Final Data Sheet 4Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table5Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source voltage VDSS 650 - - V VGS=0V,ID=0.95mA Gate threshold voltage1) VGS(th) 3.5 4.5 5.6 V VDS=VGS,ID=9.5mA Zero gate voltage drain current IDSS - µA VDS=650V,VGS=0V,Tj=25°C VDS=650V,VGS=0V,Tj=175°C Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) mΩ VGS=15V,ID=46.9A,Tj=25°C VGS=18V,ID=46.9A,Tj=25°C VGS=20V,ID=46.9A,Tj=25°C VGS=18V,ID=46.9A,Tj=175°C Internal gate resistance RG,int - 2.5 - Ω f=1MHz 1) Tested after 1 ms pulse at VGS = +20 V. “Linear mode” operation is not recommended. For assessment of potential “linear mode” operation, please contact Infineon sales office.

CoolSiCªMOSFET650VG2 IMZA65R020M2H Rev.2.2,2024-03-05Final Data Sheet Table6Dynamiccharacteristics External parasitic elements (PCB layout) influence switching behavior significantly. Stray inductances and coupling capacitances must be minimized. For layout recommendations please use provided application notes or contact Infineon sales office. Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 2038 - pF VGS=0V,VDS=400V,f=250kHz Reverse transfer capacitance Crss - 11.5 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance1) Coss - 151 197 pF VGS=0V,VDS=400V,f=250kHz Output charge1) Qoss - 108 141 nC calculationbasedonCoss Effective output capacitance, energy related2) Co(er) - 183 - pF VGS=0V, VDS=0...400V Effective output capacitance, time related3) Co(tr) - 271 - pF ID=constant,VGS=0V, VDS=0...400V Turn-on delay time td(on) - 10.3 - ns VDD=400V,VGS=0/18V, ID=46.9A,RG,ext=1.8Ω ; see table 10 Rise time tr - 12.0 - ns VDD=400V,VGS=0/18V, ID=46.9A,RG,ext=1.8Ω ; see table 10 Turn-off delay time td(off) - 19 - ns VDD=400V,VGS=0/18V, ID=46.9A,RG,ext=1.8Ω ; see table 10 Fall time tf - 5.6 - ns VDD=400V,VGS=0/18V, ID=46.9A,RG,ext=1.8Ω ; see table 10 Turn-ON switching losses4) Eon - 59 - µJ VDD=400V,VGS=0/18V, ID=46.9A,RG,ext=1.8Ω Turn-OFF switching losses4) Eoff - 64 - µJ VDD=400V,VGS=0/18V, ID=46.9A,RG,ext=1.8Ω Total switching losses4) Etot - 123 - µJ VDD=400V,VGS=0/18V, ID=46.9A,RG,ext=1.8Ω Table7Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Plateau gate to source charge QGS(pl) - 15 - nC VDD=400V,ID=46.9A, VGS=0to18V Gate to drain charge QGD - 10.7 - nC VDD=400V,ID=46.9A, VGS=0to18V Total gate charge QG - 57 - nC VDD=400V,ID=46.9A, VGS=0to18V 1) Maximum specification is defined by calculated six sigma upper confidence bound 2)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V. 3)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V. 4) Values for 4-pin configuration based on TO-263-7 measurements; MOSFET used in half-bridge configuration without external diode

CoolSiCªMOSFET650VG2 IMZA65R020M2H Rev.2.2,2024-03-05Final Data Sheet Table8Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source reverse voltage VSD - 4.3 - V VGS=0V,IS=46.9A,Tj=25°C MOSFET forward recovery time tfr 18.0 13.2 - ns VDD=400V,IS=46.9A, diS/dt=1000A/µs;seetable9 VDD=400V,IS=46.9A, diS/dt=4000A/µs;seetable9 MOSFET forward recovery charge1) Qfr 110 184 - nC VDD=400V,IS=46.9A, diS/dt=1000A/µs;seetable9 VDD=400V,IS=46.9A, diS/dt=4000A/µs;seetable9 MOSFET peak forward recovery current Ifrm 12.2 27.8 - A VDD=400V,IS=46.9A, diS/dt=1000A/µs;seetable9 VDD=400V,IS=46.9A, diS/dt=4000A/µs;seetable9 1)QfrincludesQoss

CoolSiCªMOSFET650VG2 IMZA65R020M2H Rev.2.2,2024-03-05Final Data Sheet 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 175 100 150 200 250 300 Ptot=f(TC) Diagram2:Safeoperatingarea VDS[V] IDS[A] 100 101 102 103 10-2 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms 10 ms DC IDS=f(VDS); TC=25 °C; D=0; parameter: tp Diagram3:Safeoperatingarea VDS[V] IDS[A] 100 101 102 103 10-2 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms 10 ms DC IDS=f(VDS); TC=80 °C; D=0; parameter: tp Diagram4:Max.transientthermalimpedance tp[s] Zth(j-c),max[K/W] 10-5 10-4 10-3 10-2 10-1 10-2 10-1 100 0.5 0.2 0.05 0.02 0.1 0.01 single pulse Zth(j-c),max=f(tP); parameter: D=tp/T

CoolSiCªMOSFET650VG2 IMZA65R020M2H Rev.2.2,2024-03-05Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] IDS[A] 100 200 300 400 500 20 V 18 V 15 V 12 V 10 V 8 V IDS=f(VDS); Tj=25 °C; parameter: VGS Diagram6:Typ.outputcharacteristics VDS[V] IDS[A] 100 200 300 400 500 20 V 18 V 15 V 12 V 10 V 8 V IDS=f(VDS); Tj=175 °C; parameter: VGS Diagram7:Typ.drain-sourceon-stateresistance IDS[A] RDS(on)[Ω ] 100 200 300 400 500 0.025 0.045 0.065 18 V 20 V 15 V 12 V 10 V RDS(on)=f(IDS); Tj=125 °C; parameter: VGS Diagram8:Drain-sourceon-stateresistance Tj[°C] RDS(on)[normalized] -50 -25 100 125 150 175 0.5 1.0 1.5 2.0 RDS(on)=f(Tj); ID=46.9 A; VGS=18 V

CoolSiCªMOSFET650VG2 IMZA65R020M2H Rev.2.2,2024-03-05Final Data Sheet Diagram9:Typ.transfercharacteristics VGS[V] IDS[A] 100 200 300 400 500 175 °C 25 °C IDS=f(VGS); VDS=20 V; parameter: Tj Diagram10:Typ.gatecharge QG[nC] VGS[V] 400 V VGS=f(QG); ID=46.9 A pulsed; parameter: VDD Diagram11:Typ.reversedraincurrentcharacteristics VSD[V] ISD[A] 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 10-1 100 101 102 103 175 °C 25 °C ISD=f(VSD); VGS=0 V; parameter: Tj Diagram12:Typ.reversedraincurrentcharacteristics VSD[V] ISD[A] 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 10-1 100 101 102 103 25 °C 175 °C ISD=f(VSD); VGS=18 V; parameter: Tj

CoolSiCªMOSFET650VG2 IMZA65R020M2H Rev.2.2,2024-03-05Final Data Sheet Diagram13:Avalancheenergy Tj[°C] EAS[mJ] 100 125 150 175 100 150 200 250 300 EAS=f(Tj); ID=10.2 A; VDD=50 V Diagram14:Drain-sourcebreakdownvoltage Tj[°C] VDSS[V] -50 -25 100 125 150 175 650 660 670 680 690 700 VDSS=f(Tj); ID=0.95 mA Diagram15:Typ.capacitances VDS[V] C[pF] 100 150 200 250 300 350 400 450 500 550 600 650 101 102 103 104 Ciss Coss Crss C=f(VDS); VGS=0 V; f=250 kHz Diagram16:Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 150 200 250 300 350 400 450 500 550 600 650 Eoss=f(VDS)

CoolSiCªMOSFET650VG2 IMZA65R020M2H Rev.2.2,2024-03-05Final Data Sheet Diagram17:Typ.Qossoutputcharge VDS[V] Qoss[nC] 100 150 200 250 300 350 400 450 500 550 600 650 100 120 140 160 Qoss=f(VDS) Diagram18:Typ.SwitchingLossesvsRG,ext RG,ext[Ω ] E[µJ] 200 400 600 800 Etot Eon Eoff E=f(RG,ext); VDD=400 V; VGS=0/18 V; ID=46.9 A Diagram19:Typ.SwitchingLossesvsswitchingcurrent IDS[A] E[µJ] 100 100 150 200 250 300 350 Etot Eoff Eon E=f(IDS); VDD=400 V; VGS=0/18 V; RG,ext=1.8 Ω

CoolSiCªMOSFET650VG2 IMZA65R020M2H Rev.2.2,2024-03-05Final Data Sheet 6TestCircuits Table9Bodydiodecharacteristics Test circuit for body diode characteristics Body diode recovery waveform RG1 RG2 IS VDS Qfr tfr Ifrm Ifrm Is dIs / dtVDD ISO VDD VDS IS Table10Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS RG VDD Table11Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform VDS VDSS ID VDS ID VDS VDD

CoolSiCªMOSFET650VG2 IMZA65R020M2H Rev.2.2,2024-03-05Final Data Sheet 7PackageOutlines DIMENSIONSMIN.MAX.MILLIMETERSPG-TO247-4-U02PACKAGE - GROUPNUMBER: cDD1D2 AA1bA2 0.5820.9016.251.05 0.65 4.902.311.101.90 0.6616.8521.101.35 0.79 5.102.511.302.10A3b3b2 D3D4 24.9725.274.905.10 5.08 Q E2EeLN SøP 5.60 2.4015.70 3.5019.80 13.10 6.00 2.6013.50 3.70 15.90 20.10øP17.007.40 2.79e1e2 øP2TU 2.54 MIN.MAX.DIMENSIONSMILLIMETERS Figure1OutlinePG-TO247-4,dimensionsinmm

CoolSiCªMOSFET650VG2 IMZA65R020M2H Rev.2.2,2024-03-05Final Data Sheet 8AppendixA Table12RelatedLinks

  • IFXCoolSiCCoolSiCªMOSFET650VG2Webpage:www.infineon.com
  • IFXCoolSiCCoolSiCªMOSFET650VG2applicationnote:www.infineon.com
  • IFXCoolSiCCoolSiCªMOSFET650VG2simulationmodel:www.infineon.com
  • IFXDesigntools:www.infineon.com

CoolSiCªMOSFET650VG2 IMZA65R020M2H Rev.2.2,2024-03-05Final Data Sheet RevisionHistory IMZA65R020M2H Revision:2024-03-05,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2023-10-10 Release of final version 2.1 2024-02-29 updated simulation model; included Eon and Eoff data and diagrams 2.2 2024-03-05 minor layout changes Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2023InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.