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Technical content

Features

  • V DSS = 1200 V at Tvj = 25°C
  • I DCC = 127 A at Tvj = 25°C
  • R DS(on) = 14 mΩ at VGS = 18 V, Tvj = 25°C
  • Very low switching losses
  • Short circuit withstand time 3 µs
  • Benchmark gate threshold voltage, V GS(th) = 4.2 V
  • Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
  • Robust body diode for hard commutation
  • .XT interconnection technology for best-in-class thermal performance Potential applications
  • General purpose drives (GPD)
  • EV-Charging
  • Online UPS/Industrial UP
  • String inverters
  • Solar power optimizer Product validation
  • Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 22021-10-21 restricted Copyright © Infineon Technologies AG 2021. All rights reserved. 3 4

Description

1 – drain 2 – source 3 – Kelvin sense contact 4 – gate Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction (only for 4pin, TO263-7L ) Type Package Marking IMZA120R014M1H PG-TO247-4-STD-T3.7 12M1H014 IMZA120R014M1H CoolSiC™ 1200 V SiC Trench MOSFET Datasheet Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 www.infineon.com 2022-01-31

CoolSiC™ 1200 V SiC Trench MOSFET Table of contents Datasheet 2 Revision 1.00 2022-01-31

1 Package

Table 1 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Storage temperature Tstg -55 150 °C Soldering temperature wave soldering 1.6 mm (0.063 in.) from case for 10 s 260 °C Mounting torque M M3 screw Maximum of mounting process: 3 0.6 Nm Thermal resistance, junction-ambient Rth(j-a) 62 K/W

2 MOSFET

Table 2 Maximum rated values Parameter Symbol Note or test condition Values Unit Drain-source voltage VDSS Tvj ≥ 25 °C 1200 V Continuous DC drain current for Rth(j-c,max), limited by Tvj(max) IDDC VGS = 18 V Tc = 25 °C 127 A Tc = 100 °C 89.3 Peak drain current, tp limited by Tvj(max) IDM VGS = 18 V 268 A Gate-source voltage, max. transient voltage1) VGS tp ≤ 0.5 µs, D<0.01 -10/23 V Gate-source voltage, max. static voltage VGS -5/20 V Avalanche energy, single pulse EAS ID = 53 A, VDD = 50 V, L = 0.7 nH 956 mJ Avalanche energy, repetitive EAR ID = 53 A, VDD = 50 V 4.7 mJ Short-circuit withstand time tSC VDD ≤ 800 V, VDS,peak<1200 V, VGS(on) = 15 V, Tvj(start) = 25 °C 3 µs Power dissipation, limited by Tvj(max) Ptot Tc = 25 °C 455 W Tc = 100 °C 227 1) Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior of the device. The design guidelines described in Application Note AN2018-09 must be considered to ensure sound operation of the device over the planned lifetime. Table 3 Recommended values Parameter Symbol Note or test condition Values Unit Recommended turn-on gate voltage VGS(on) 15...18 V (table continues...) IMZA120R014M1H CoolSiC™ 1200 V SiC Trench MOSFET Datasheet 3 Revision 1.00 2022-01-31

Table 3 (continued) Recommended values Parameter Symbol Note or test condition Values Unit Recommended turn-off gate voltage VGS(off) -5...0 V Table 4 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Drain-source on-state resistance RDS(on) ID = 54.3 A Tvj = 25 °C, VGS(on) = 18 V 14 18.4 mΩ Tvj = 100 °C, VGS(on) = 18 V Tvj = 175 °C, VGS(on) = 18 V Tvj = 25 °C, VGS(on) = 15 V 17.9 21.9 Gate-emitter threshold voltage VGS(th) ID = 23.4 mA, VDS = VGS (tested after 1 ms pulse at VGS = 20 V) Tvj = 25 °C 3.5 4.2 5.2 V Tvj = 175 °C 3.6 Zero gate-voltage drain current IDSS VDS = 1200 V, VGS = 0 V Tvj = 25 °C 430 µA Tvj = 175 °C 7.3 Gate leakage current IGSS VDS = 0 V VGS = 23 V 200 nA VGS = -10 V -200 Forward transconductance gfs ID = 54.3 A, VDS = 20 V 36.3 S Internal gate resistance RG,int f = 1 MHz, VAC = 25 mV 3.7 Ω Input capacitance Ciss VDD = 25 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV 4580 nF Output capacitance Coss VDD = 25 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV 211 pF Reverse transfer capacitance Crss VDD = 25 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV 30 pF Coss stored energy Eoss VDD = 25 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV 86 µJ Total gate charge QG VDD = 800 V, ID = 54.3 A, VGS = -2/18 V, turn-on pulse 110 nC Plateau gate charge QGS(pl) VDD = 800 V, ID = 54.3 A, VGS = -2/18 V, turn-on pulse 36 nC Gate-to-drain charge QGD VDD = 800 V, ID = 54.3 A, VGS = -2/18 V, turn-on pulse 32 nC (table continues...) IMZA120R014M1H CoolSiC™ 1200 V SiC Trench MOSFET Datasheet 4 Revision 1.00 2022-01-31

Table 4 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Turn-on delay time td(on) VDD = 800 V, ID = 54.3 A, VGS = 0/18 V, RGS(on) = 1 Ω, RGS(off) = 1 Ω, diode: body diode at VGS = 0 V , Lσ = 15 nH Tvj = 25 °C 48 ns Tvj = 175 °C 46 Rise time tr VDD = 800 V, ID = 54.3 A, VGS = 0/18 V, RGS(on) = 1 Ω, RGS(off) = 1 Ω, diode: body diode at VGS = 0 V, Lσ = 15 nH Tvj = 25 °C 18 ns Tvj = 175 °C 21 Turn-off delay time td(off) VDD = 800 V, ID = 54.3 A, VGS = 0/18 V, RGS(on) = 1 Ω, RGS(off) = 1 Ω, diode: body diode at VGS = 0 V, Lσ = 15 nH Tvj = 25 °C 58 ns Tvj = 175 °C 60 Fall time tf VDD = 800 V, ID = 54.3 A, VGS = 0/18 V, RGS(on) = 1 Ω, RGS(off) = 1 Ω, diode: body diode at VGS = 0 V, Lσ = 15 nH Tvj = 25 °C 20 ns Tvj = 175 °C 20 Turn-on energy Eon VDD = 800 V, ID = 54.3 A, VGS = 0/18 V, RGS(on) = 1 Ω, RGS(off) = 1 Ω, diode: body diode at VGS = 0 V, Lσ = 15 nH Tvj = 25 °C 560 µJ Tvj = 175 °C 900 Turn-off energy Eoff VDD = 800 V, ID = 54.3 A, VGS = 0/18 V, RGS(on) = 1 Ω, RGS(off) = 1 Ω, diode: body diode at VGS = 0 V, Lσ = 15 nH Tvj = 25 °C 150 µJ Tvj = 175 °C 170 Total switching energy Etot VDD = 800 V, ID = 54.3 A, VGS = 0/18 V, RGS(on) = 1 Ω, RGS(off) = 1 Ω, diode: body diode at VGS = 0 V, Lσ = 15 nH Tvj = 25 °C 793 µJ Tvj = 175 °C 1403 (table continues...) IMZA120R014M1H CoolSiC™ 1200 V SiC Trench MOSFET Datasheet 5 Revision 1.00 2022-01-31

Table 4 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. MOSFET/body diode thermal resistance, junction to case Rth(j-c) 0.25 0.33 K/W Virtual junction temperature Tvj -55 175 °C Note: The chip technology was characterized up to 200 kV/µs. The measured dV/dt was limited by measurement test setup and package. Dynamic test circuit see Fig. F.

3 Body diode

Table 5 Maximum rated values Parameter Symbol Note or test condition Values Unit Drain-source voltage VDSS Tvj ≥ 25 °C 1200 V Continuous reverse drain current for Rth(j-c,max), limited by Tvj(max) ISDC VGS = 0 V Tc = 25 °C 95 A Tc = 100 °C 55 Peak reverse drain current, tp limited by Tvj(max) ISM VGS = 0 V 267.9 A Table 6 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Drain-source reverse voltage VSD ISD = 54.3 A, VGS = 0 V Tvj = 25 °C 3.8 5 V Tvj = 100 °C 3.7 Tvj = 175 °C 3.6 MOSFET forward recovery charge Qfr VDD = 800 V, ISD = 54.3 A, VGS = 0 V, dif/dt = 3000 A/µs, Qfr includes also QC Tvj = 25 °C 450 nC Tvj = 175 °C 825 MOSFET peak forward recovery current Ifrm VDD = 800 V, ISD = 54.3 A, VGS = 0 V, dif/dt = 3000 A/µs, Qfr includes also QC Tvj = 25 °C 11 A Tvj = 175 °C 18 MOSFET forward recovery energy Efr VDD = 800 V, ISD = 54.3 A, VGS = 0 V, dif/dt = 3000 A/µs, Qfr includes also QC Tvj = 25 °C 83 µJ Tvj = 175 °C 333 (table continues...) IMZA120R014M1H CoolSiC™ 1200 V SiC Trench MOSFET Datasheet 6 Revision 1.00 2022-01-31

Table 6 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. MOSFET/body diode thermal resistance, junction to case Rth(j-c) 0.25 0.33 K/W Virtual junction temperature Tvj -55 175 °C IMZA120R014M1H CoolSiC™ 1200 V SiC Trench MOSFET Datasheet 7 Revision 1.00 2022-01-31

4 Characteristics diagrams

Reverse bias safe operating area (RBSOA), MOSFET IDS = f(VDS) Tvj ≤ 175 °C, VGS = 0/18 V, Tc = 25 °C Power dissipation as a function of case temperature limited by bond wire, MOSFET Ptot = f(Tc) 0 200 400 600 800 1000 1200 1400 100 150 200 250 300 0 25 50 75 100 125 150 175 100 200 300 400 500 600 Maximum DC drain to source current as a function of case temperature limited by bond wire, MOSFET IDS = f(Tc) Maximum source to drain current as a function of case temperature limited by bond wire, MOSFET ISD = f(Tc) VGS = 0 V 0 25 50 75 100 125 150 175 100 120 140 160 0 25 50 75 100 125 150 175 100 120 140 IMZA120R014M1H CoolSiC™ 1200 V SiC Trench MOSFET Datasheet 8 Revision 1.00 2022-01-31

Typical transfer characteristic , MOSFET IDS = f(VGS) VDS = 20 V, tp = 20 µs Typical gate-source threshold voltage as a function of junction temperature , MOSFET VGS(th) = f(Tvj) ID = 23.4 mA 0 2 4 6 8 10 12 14 16 18 20 100 200 300 400 500 600 700 800 900 -50 -25 0 25 50 75 100 125 150 175 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Typical output characteristic, VGS as parameter , MOSFET IDS = f(VDS) Tvj = 25 °C, tp = 20 µs Typical output characteristic, VGS as parameter, MOSFET IDS = f(VDS) Tvj = 175 °C, tp = 20 µs 0 3 6 9 12 15 18 21 24 100 150 200 250 300 350 400 450 500 0 3 6 9 12 15 18 21 24 100 150 200 250 300 350 400 450 500 IMZA120R014M1H CoolSiC™ 1200 V SiC Trench MOSFET Datasheet 9 Revision 1.00 2022-01-31

Typical on-state resistance as a function of junction temperature, MOSFET RDS(on) = f(Tvj) ID = 54.3 A Typical gate charge , MOSFET VGS = f(QG) ID = 54.3 A, VDS = 800 V -50 -25 0 25 50 75 100 125 150 175 0 30 60 90 120 150 Typical capacitance as a function of drain-source voltage , MOSFET C = f(VDS) f = 100 kHz, VGS = 0 V Typical reverse drain voltage as function of junction temperature , MOSFET VSD = f(Tvj) ISD = 54.3 A, VGS = 0 V 1 10 100 1000 100 1000 10000 -50 -25 0 25 50 75 100 125 150 175 IMZA120R014M1H CoolSiC™ 1200 V SiC Trench MOSFET Datasheet 10 Revision 1.00 2022-01-31

Typical reverse drain current as function of reverse drain voltage, VGS as parameter, MOSFET ISD = f(VSD) Tvj = 25 °C, tp = 20 µs Typical reverse drain current as function of reverse drain voltage, VGS as parameter, MOSFET ISD = f(VSD) Tvj = 175 °C, tp = 20 µs 0 1 2 3 4 5 6 100 150 200 250 300 350 400 0 1 2 3 4 5 6 120 160 200 Typical switching energy as a function of junction temperature, test circuit in Fig. F, 2nd device own body diode: VGS = 0 V, MOSFET E = f(Tvj) VGS = 0/18 V, ID = 54.3 A, RG,ext = 1 Ω, VDD = 800 V Typical switching energy as a function of drain current, test circuit in Fig. F, 2nd device own body diode: VGS = 0 V, MOSFET E = f(ID) VGS = 0/18 V, Tvj = 175 °C, RG,ext = 1 Ω, VDD = 800 V 25 50 75 100 125 150 175 300 600 900 1200 1500 10 30 50 70 90 110 500 1000 1500 2000 2500 IMZA120R014M1H CoolSiC™ 1200 V SiC Trench MOSFET Datasheet 11 Revision 1.00 2022-01-31

Typical switching energy losses as a function of gate resistance, test circuit in Fig. F, 2nd device own body diode: VGS = 0 V, MOSFET E = f(RG,ext) VGS = 0/18 V, ID = 54.3 A, Tvj = 175 °C, VDD = 800 V Typical switching times as a function of gate resistance, test circuit in Fig. F, 2nd device own body diode: VGS = 0 V, MOSFET t = f(RG,ext) VGS = 0/18 V, ID = 54.3 A, Tvj = 175 °C, VDD = 800 V 0 10 20 30 40 50 800 1600 2400 3200 4000 4800 5600 6400 7200 8000 0 10 20 30 40 50 180 270 360 450 Typical reverse recovery charge as a function of reverse drain current slope, test circuit in Fig. F, 2nd device own body diode: VGS = 0 V, MOSFET Qfr = f(dif/dt ) VGS = 0/18 V, ID = 54.3 A, VDD = 800 V Typical reverse recovery current as a function of reverse drain current slope, test circuit in Fig. F, 2nd device own body diode: VGS = 0 V, MOSFET Ifrm = f(dif/dt ) VGS = 0/18 V, ID = 54.3 A, VDD = 800 V 0 1000 2000 3000 4000 5000 6000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1000 2000 3000 4000 5000 6000 IMZA120R014M1H CoolSiC™ 1200 V SiC Trench MOSFET Datasheet 12 Revision 1.00 2022-01-31

Typical switching energy losses as a function of dead time / blanking time, test circuit in Fig. F, 2nd device own bodydiode: VGS = -5 V, MOSFET E = f(tdead) VGS = -5/18 V, ID = 54.3 A, Tvj = 175 °C, VDD = 800 V Max. transient thermal impedance (MOSFET/diode) , MOSFET Zth(j-c),max = f(tp) D = tp/T 50 150 250 350 450 550 650 750 850 950 1050 100 200 300 400 500 600 700 800 900 1000 1E-5 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 IMZA120R014M1H CoolSiC™ 1200 V SiC Trench MOSFET Datasheet 13 Revision 1.00 2022-01-31

5 Package outlines

PG-TO247-4-STD-T3.7 DIMENSIONS MILLIMETERS MIN. MAX. A 4.90 5.10 A1 2.31 2.51 A2 1.90 2.10 b 0.05 1.10 0.25 1.30 b1 0.65 0.79 b2 - 0.20 b3 1.34 1.44 c 0.58 0.66 D 20.90 21.10 D1 16.25 16.85 D2 1.05 1.35 D3 24.97 25.27 D4 4.90 5.10 E 15.70 15.90 E1 13.10 13.50 E2 2.40 2.60 e1 5.08 e2 2.79 e3 2.54 L 19.80 20.10 L1 - 4.30 øP 3.50 3.70 øP1 7.00 7.40 øP2 2.40 2.60 Q 5.60 6.00 S 6.15 T 9.80 10.20 U 6.00 6.40 DOCUMENT NO. Z8B00184785 REVISION SCALE 2:1 0 5 10mm EUROPEAN PROJECTION ISSUE DATE 21.08.2017 Figure 1 IMZA120R014M1H CoolSiC™ 1200 V SiC Trench MOSFET Datasheet 14 Revision 1.00 2022-01-31

6 Testing conditions

Figure A. Definition of switching times Figure B. Definition of diode switching characteristics Figure C. Definition of switching losses Figure E. Thermal equivalent circuit ID(t) t ID(t) 2% IDD t VDS(t)VDS(t) t1 t2 t3 t4 Eon = t3ʃt4VDS*ID*dt Eoff = t1ʃt2VDS*ID*dt VDS(t) t1 t2 t3 t4 2% VDS t t Eon = t3ʃt4VDS*ID*dt Eoff = t1ʃt2VDS*ID*dt 90% VGS 10% VGS VGS(t) t 90% VGS 10% VGS VGS(t) t r2 r3r1 M =TC Tj(t) p(t) τ1/r1 τ2/r2 τn/rn r2 r3r1 M =TC Tj(t) p(t) τ1/r1 τ2/r2 τn/rn ton 90% td(on) tr 10%10%VGSVGS VDSVDS td(off)td(off) tftf tofftoffton 90% td(on) tr 10%VGS VDS td(off) tf toff I,V t VR IF tata tbtb dIp/dt QbQa I,V t VR IF Ifrm tfr ta tb dIp/dt 10% Ifrm dIfr/dt 90% Ifrm tfr = ta + tb Qfr = Qa + Qb QbQa QG,totQGS,pl VGS,VDS 97% VDS VDS t, Q Q QG,totQGS,pl QQGDGD VGS,VDS 97% VDS VGS = 18 V VDS t, Q Q VDD ½Lσ ½Lσ RG DUT Cσ L second device VGS(off) VDD ½Lσ ½Lσ RG DUT Cσ L second device VGS(off) Figure D. Definition of QGD Figure F. Dynamic test circuit Parasitic inductance Lσ, Parasitic capacitor Cσ, Figure 2 IMZA120R014M1H CoolSiC™ 1200 V SiC Trench MOSFET Datasheet 15 Revision 1.00 2022-01-31

Revision history

Document revision Date of release Description of changes 1.00 2022-01-31 Final datasheet IMZA120R014M1H CoolSiC™ 1200 V SiC Trench MOSFET Datasheet 16 Revision 1.00 2022-01-31

All referenced product or service names and trademarks are the property of their respective owners. Edition 2022-01-31 Published by Infineon Technologies AG

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© 2022 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-ABB961-001 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.