IMZ88 UTC | Alldatasheet

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Technical content

U T C I M Z 8 8 DUAL TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R215-005,A GENERAL PURPOSE DUAL TRANSISTOR

FEATURES

*Both a 8550S chip and 8050S chip in a SMT package

APPLICATIONS

*Class B push-pull audio amplifier *General purpose applications MARKING 132 645 Z 8 EQUIVALENT CIRCUITS Tr2 Tr1 (1)(2)(3) (4) (5) (6) SOT-26 PIN 1 : Collector (1) PIN 4: Base (2) PIN 2: Emitter (2) PIN 5: Base (1) PIN 3: Collector (2) PIN 6: Emitter (1) ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) RATING PARAMETER SYMBOL Tr1 Tr2 UNIT Collector-Base Voltage V CBO -30 30 V Collector-Emitter Voltage V CEO -20 20 V Emitter-Base Voltage V EBO -5 5 V Collector Current Ic -700 700 mA Collector Dissipation Pc 300 mW Junction Temperature T j 150 °C Storage Temperature T STG -65 ~ +150 °C ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified) Tr1 PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-base breakdown voltage BV CBO Ic=-100 µA,IE=0 -30 V Collector-emitter breakdown voltage BV CEO Ic=-1mA,I B=0 -20 V Emitter-base breakdown voltage BV EBO I E=-100µA,Ic=0 -5 V Collector cut-off current I CBO V CB=-30V,IE=0 -1 uA Emitter cut-off current I EBO V EB=-5V,Ic=0 -100 nA hFE1 VCE=-1V,Ic=-1mA 100 DC current gain hFE2 VCE=-1V,Ic=-150mA 120 110 400

U T C I M Z 8 8 DUAL TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R215-005,A PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT hFE3 V CE=-1V,Ic=-500mA 40 Collector-emitter saturation voltage V CE(sat) Ic=-500mA,I B=-50mA -0.5 V Base-emitter saturation voltage V BE(sat) Ic=500mA,I B=-50mA -1.2 V Base-emitter saturation voltage V BE V CE=-1V,Ic=-10mA -1.0 V Current gain bandwidth product f T V CE=-10V,Ic=-50mA 100 MHz Output capacitance Cob V CB=10V,IE=0,f=1MHz 9.0 pF Tr2 PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BV CBO Ic=100 µA,IE=0 30 V Collector-Emitter Breakdown Voltage BV CEO Ic=1mA,I B=0 20 V Emitter-Base Breakdown Voltage BV EBO I E=100µA,Ic=0 5 V Collector Cut-Off Current I CBO V CB=30V,IE=0 1 uA Emitter Cut-Off Current I EBO V EB=5V,Ic=0 100 nA hFE1 V CE=1V,Ic=1mA 100 hFE2 V CE=1V,Ic=150mA 120 110 400 DC Current Gain hFE3 V CE=1V,Ic=500mA 40 Collector-Emitter Saturation Voltage V CE(sat) Ic=500mA,I B=50mA 0.5 V Base-Emitter Saturation Voltage V BE(sat) Ic=500mA,I B=50mA 1.2 V Base-Emitter Saturation Voltage V BE V CE=1V,Ic=10mA 1.0 V Current Gain Bandwidth Product f T V CE=10V,Ic=50mA 100 MHz Output Capacitance Cob V CB=10V,IE=0,f=1MHz 9.0 pF CLASSIFICATION OF hFE2 RANK C D E RANGE 120-200 160-300 280-400 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.