IMZ2A PANJIT | Alldatasheet
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Technical content
COMPLEMENTARY DUAL GENERAL PURPOSE AMPLIFIER TRANSIS VOLTAGE 50 Volts 300mW
FEATURES
- PNP/ NPN epitaxial silicon, planar design
- Collector-emitter voltage VCE=50V
- Collector current IC=150mA
- In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA Case : SOT23-6L plastic Terminals : Solderable per MIL-STD-750,Method 2026 Approx. Weight: 0.013gram Marking : Z2A POWER ABSOLUTE RATINGS (TA =25°C) NOTE: 1. Transistor mounted on FR-4 board 70 x 60 x 1 mm. Fig.137 Tr1 Tr2 RETEMARAPL OBMYS1 rT2 rTS TINU egatloVrettimE-rotcelloCV CEO 05-0 5V egatloVesaB-rotcelloCV CBO 06-0 6V egatloVesaB-rettimEV EBO 6-7 V suounitnoCtnerruCrotcelloCI C 051-0 51A m THERMAL CHARACTERISTICS RETEMARAPL OBMYSE ULAVS TINU )1etoN(noitapissiDrewoP.xaMP TOT 003W m )1etoN(tneibmAotnoitcnuJ,ecnatsiseRlamrehTR Θ JA 601 O W/C egnaRerutarepmeTegarotSdnanoitcnuJgnitarepOT J T, STG 051+ot55- OC
ELECTRICAL CHARACTERISTICS (TA =25°C) )PNP(1rT RETEMARAPL OBMYSN OITIDNOCTSETN IMP YTX AMS TINU egatloVnwodkaerBrettimE-rotcelloCV (BR)CEO I C 1-=m A 0 5-- - V egatloVnwodkaerBesaB-rotcelloCV (BR)CBO I C 05-= µA0 6-- - V egatloVnwodkaerBesaB-rettimEV (BR)EBO I E 05-= µA6 -- - V tnerruCffotuCesaB-rotcelloCI CBO VCB V06-=- - 1 .0- µA tnerruCffotuCrettimE-rotcelloCI EBO VEB V6-=- - 1 .0- µA )1etoN(niaGtnerruCCDh FE VCE ,V6-=I C 1-=m A 0 21-0 65- egatloVnoitarutaSrettimE-rotcelloCV CE )tas(I C I/ B 05-=m 5 -/Am A - - 5 .0-V ycneuqerFffotuCf T I E 2=m V ,A CE ,V21-= fH M001=z -0 41- z HM ecnaticapaCtuptuOC b o I E 0=m V ,A CE ,V21-= fH M001=z -45 F p )NPN(2rT RETEMARAPL OBMYSN OITIDNOCTSETN IMP YTX AMS TINU egatloVnwodkaerBrettimE-rotcelloCV (BR)CEO I C 1=m A 0 5-- V egatloVnwodkaerBesaB-rotcelloCV (BR)CBO I C 05= µA0 6-- V egatloVnwodkaerBesaB-rettimEV (BR)EBO I E 05= µA7 - - V tnerruCffotuCesaB-rotcelloCI CBO VCB V06=- - 1 .0 µA tnerruCffotuCrettimE-rotcelloCI EBO VEB V7=- - 1 .0 µA )1etoN(niaGtnerruCCDh FE VCE ,V6=I C 1=m A 0 21-0 65- egatloVnoitarutaSrettimE-rotcelloCV CE )tas(I C I/ B 05=m 5 /Am A - - 4 .0V ycneuqerFffotuCf T I E 2=m V ,A CE ,V21= fH M001=z -0 81- z HM ecnaticapaCtuptuOC b o I E 0=m V ,A CE ,V21= fH M001=z -2 5 .3F p
Fig. 1. Collector Saturation Region Fig. 2. DC Current Gain Fig. 5. Base-Emitter Voltage Fig. 3. VCE(sat) versus IC Fig. 4. VBE(sat) versus IC IMZ2A
Fig. 1. Collector Saturation Region Fig. 2. DC Current Gain Fig. 3. VCE(sat) versus IC Fig. 4. VBE(sat) versus IC Fig. 5. Base-Emitter Voltage IMZ2A
- Packing information T/R - 10K per 13" plastic Reel T/R - 3K per 7” plastic Reel ORDER INFORMATION LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. IMZ2A