IMYH200R012M1H INFINEON | Alldatasheet
Document overview
- Manufacturer or author: Infineon Technologies AG
- PDF pages: 16
Technical content
Features
- V DSS = 2000 V at Tvj = 25°C
- I DCC = 123 A at Tc = 25°C
- R DS(on) = 12 mΩ at VGS = 18 V, Tvj = 25°C
- Very low switching losses
- Benchmark gate threshold voltage, V GS(th) = 4.5 V
- Robust body diode for hard commutation
- .XT interconnection technology for best-in-class thermal performance Potential applications
- String inverter
- Solar power optimizer
- EV-Charging Product validation
- Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
- Please also note the application note AN2019-05 for power and thermal cycling Copyright © Infineon Technologies AG 2021. All rights reserved. 12 2021-10-27 restricted
Description
1 – drain 2 – source 3 – Kelvin sense contact 4 – gate Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction (only for 4pin, TO263-7L) Type Package Marking IMYH200R012M1H PG-TO247-4-PLUS-NT14 20M1H012 IMYH200R012M1H CoolSiC™ 2000 V SiC Trench MOSFET Datasheet Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 www.infineon.com 2023-01-16
CoolSiC™ 2000 V SiC Trench MOSFET Table of contents Datasheet 2 Revision 1.10 2023-01-16
1 Package
Table 1 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Storage temperature Tstg -55 150 °C Soldering temperature Tsold wave soldering 1.6 mm (0.063 in.) from case for 10 s 260 °C Thermal resistance, junction-ambient Rth(j-a) 62 K/W MOSFET/body diode thermal resistance, junction-case Rth(j-c) 0.12 0.16 K/W
2 MOSFET
Table 2 Maximum rated values Parameter Symbol Note or test condition Values Unit Drain-source voltage VDSS Tvj ≥ 25 °C 2000 V Continuous DC drain current for Rth(j-c,max), limited by Tvj(max) IDDC VGS = 18 V Tc = 25 °C 123 A Tc = 100 °C 94 Peak drain current, tp limited by Tvj(max) IDM VGS = 18 V 282 A Gate-source voltage, max. transient voltage1) VGS tp ≤ 0.5 µs, D < 0.01 -10/23 V Gate-source voltage, max. static voltage VGS -7/20 V Power dissipation, limited by Tvj(max) Ptot Tc = 25 °C 552 W Tc = 100 °C 319 1) Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior of the device. The design guidelines described in Application Note AN2018-09 must be considered to ensure sound operation of the device over the planned lifetime. Table 3 Recommended values Parameter Symbol Note or test condition Values Unit Recommended turn-on gate voltage VGS(on) 15...18 V Recommended turn-off gate voltage VGS(off) -5...0 V IMYH200R012M1H CoolSiC™ 2000 V SiC Trench MOSFET Datasheet 3 Revision 1.10 2023-01-16
Table 4 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Drain-source on-state resistance RDS(on) ID = 60 A Tvj = 25 °C, VGS(on) = 18 V 12 16.5 mΩ Tvj = 100 °C, VGS(on) = 18 V Tvj = 175 °C, VGS(on) = 18 V Tvj = 25 °C, VGS(on) = 15 V 13 18 Gate-source threshold voltage VGS(th) ID = 48 mA, VDS = VGS (tested after 1 ms pulse at VGS = 20 V) Tvj = 25 °C 3.5 4.5 5.5 V Tvj = 175 °C 3.6 Zero gate-voltage drain current IDSS VDS = 2000 V, VGS = 0 V Tvj = 25 °C 800 µA Tvj = 175 °C 10 Gate leakage current IGSS VDS = 0 V VGS = 23 V 100 nA VGS = -10 V -100 Forward transconductance gfs ID = 60 A, VDS = 20 V 30 S Internal gate resistance RG,int f = 100 kHz, VAC = 25 mV 3 Ω Input capacitance Ciss VDD = 1200 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV 9700 pF Output capacitance Coss VDD = 1200 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV 322 pF Reverse transfer capacitance Crss VDD = 1200 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV 22 pF Coss stored energy Eoss VDD = 1200 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV 216 µJ Total gate charge QG VDD = 1200 V, ID = 60 A, VGS = -2/18 V, turn-on pulse 246 nC Plateau gate charge QGS(pl) VDD = 1200 V, ID = 60 A, VGS = -2/18 V, turn-on pulse 66 nC Gate-to-drain charge QGD VDD = 1200 V, ID = 60 A, VGS = -2/18 V, turn-on pulse 44 nC Turn-on delay time td(on) VDD = 1200 V, ID = 60 A, VGS = -2/18 V, RGS(on) = 2 Ω, RGS(off) = 2 Ω, Lσ = 15 nH, diode: body diode at VGS = -2 V Tvj = 25 °C 16 ns Tvj = 175 °C 21 (table continues...) IMYH200R012M1H CoolSiC™ 2000 V SiC Trench MOSFET Datasheet 4 Revision 1.10 2023-01-16
Table 4 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Rise time tr VDD = 1200 V, ID = 60 A, VGS = -2/18 V, RGS(on) = 2 Ω, RGS(off) = 2 Ω, Lσ = 15 nH, diode: body diode at VGS = -2 V Tvj = 25 °C 13 ns Tvj = 175 °C 19 Turn-off delay time td(off) VDD = 1200 V, ID = 60 A, VGS = -2/18 V, RGS(on) = 2 Ω, RGS(off) = 2 Ω, Lσ = 15 nH, diode: body diode at VGS = -2 V Tvj = 25 °C 50 ns Tvj = 175 °C 77 Fall time tf VDD = 1200 V, ID = 60 A, VGS = -2/18 V, RGS(on) = 2 Ω, RGS(off) = 2 Ω, Lσ = 15 nH, diode: body diode at VGS = -2 V Tvj = 25 °C 24 ns Tvj = 175 °C 27 Turn-on energy Eon VDD = 1200 V, ID = 60 A, VGS = -2/18 V, RGS(on) = 2 Ω, RGS(off) = 2 Ω, Lσ = 15 nH, diode: body diode at VGS = -2 V Tvj = 25 °C 2400 µJ Tvj = 175 °C 3800 Turn-off energy Eoff VDD = 1200 V, ID = 60 A, VGS = -2/18 V, RGS(on) = 2 Ω, RGS(off) = 2 Ω, Lσ = 15 nH, diode: body diode at VGS = -2 V Tvj = 25 °C 960 µJ Tvj = 175 °C 1200 Total switching energy Etot VDD = 1200 V, ID = 60 A, VGS = -2/18 V, RGS(on) = 2 Ω, RGS(off) = 2 Ω, Lσ = 15 nH, diode: body diode at VGS = -2 V Tvj = 25 °C 4280 µJ Tvj = 175 °C 6835 Virtual junction temperature Tvj -55 175 °C Note: The chip technology was characterized up to 100 kV/µs. The measured dV/dt was limited by measurement test setup and package. Dynamic test circuit see Fig. F. IMYH200R012M1H CoolSiC™ 2000 V SiC Trench MOSFET Datasheet 5 Revision 1.10 2023-01-16
3 Body diode (MOSFET)
Table 5 Maximum rated values Parameter Symbol Note or test condition Values Unit Drain-source voltage VDSS Tvj ≥ 25 °C 2000 V Continuous reverse drain current for Rth(j-c,max), limited by Tvj(max) ISDC VGS = 0 V Tc = 25 °C 123 A Tc = 100 °C 94 Peak reverse drain current, tp limited by Tvj(max) ISM VGS = 0 V 256 A Table 6 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Drain-source reverse voltage VSD ISD = 60 A, VGS = 0 V Tvj = 25 °C 3.4 5.5 V Tvj = 100 °C 3.3 Tvj = 175 °C 3.2 MOSFET forward recovery charge Qfr VDD = 1200 V, ISD = 60 A, VGS=-2 V, RGS(on) = 2 Ω, Qfr includes also QC Tvj = 25 °C 2000 nC Tvj = 175 °C 3950 MOSFET peak forward recovery current Ifrm VDD = 1200 V, ISD = 60 A, VGS=-2 V, diSD/dt = 3000 A/µs, Qfr includes also QC Tvj = 25 °C 54 A Tvj = 175 °C 63 MOSFET forward recovery energy Efr VDD = 1200 V, ISD = 60 A, VGS=-2 V, RGS(on) = 2 Ω, Qfr includes also QC Tvj = 25 °C 920 µJ Tvj = 175 °C 1835 Virtual junction temperature Tvj -55 175 °C IMYH200R012M1H CoolSiC™ 2000 V SiC Trench MOSFET Datasheet 6 Revision 1.10 2023-01-16
4 Characteristics diagrams
Reverse bias safe operating area (RBSOA) IDS = f(VDS) Tvj ≤ 175 °C, VGS = 0/18 V, Tc = 25 °C Power dissipation as a function of case temperature limited by bond wire Ptot = f(Tc) 0 300 600 900 1200 1500 1800 2100 100 150 200 250 300 350 0 25 50 75 100 125 150 175 100 200 300 400 500 600 Maximum DC drain to source current as a function of case temperature limited by bond wire IDS = f(Tc) Maximum source to drain current as a function of case temperature limited by bond wire ISD = f(Tc) VGS = 0 V 0 25 50 75 100 125 150 175 100 120 140 0 25 50 75 100 125 150 175 100 120 140 IMYH200R012M1H CoolSiC™ 2000 V SiC Trench MOSFET Datasheet 7 Revision 1.10 2023-01-16
Typical transfer characteristic IDS = f(VGS) VDS = 20 V, tp = 20 µs Typical gate-source threshold voltage as a function of junction temperature VGS(th) = f(Tvj) ID = 48 mA 0 4 8 12 16 20 24 28 400 800 1200 1600 2000 -50 -25 0 25 50 75 100 125 150 175 Typical output characteristic, VGS as parameter IDS = f(VDS) Tvj = 25 °C, tp = 20 µs Typical output characteristic, VGS as parameter IDS = f(VDS) Tvj = 175 °C, tp = 20 µs 0 2 4 6 8 10 12 14 16 18 20 200 400 600 800 1000 1200 0 2 4 6 8 10 12 14 16 18 20 100 200 300 400 500 600 IMYH200R012M1H CoolSiC™ 2000 V SiC Trench MOSFET Datasheet 8 Revision 1.10 2023-01-16
Typical on-state resistance as a function of junction temperature RDS(on) = f(Tvj) ID = 60 A Typical gate charge VGS = f(QG) ID = 60 A, VDS = 1200 V -50 -25 0 25 50 75 100 125 150 175 -20 20 60 100 140 180 220 260 Typical capacitance as a function of drain-source voltage C = f(VDS) f = 100 kHz, VGS = 0 V Typical reverse drain voltage as function of junction temperature VSD = f(Tvj) ISD = 60 A, VGS = 0 V 1 10 100 1000 100 1000 10000 -50 -25 0 25 50 75 100 125 150 175 IMYH200R012M1H CoolSiC™ 2000 V SiC Trench MOSFET Datasheet 9 Revision 1.10 2023-01-16
Typical reverse drain current as function of reverse drain voltage, VGS as parameter ISD = f(VSD) Tvj = 25 °C, tp = 20 µs Typical reverse drain current as function of reverse drain voltage, VGS as parameter ISD = f(VSD) Tvj = 175 °C, tp = 20 µs 0 1 2 3 4 5 100 150 200 250 300 0 1 2 3 4 5 100 150 200 250 300 Typical switching energy as a function of junction temperature, test circuit in Fig. F, 2nd device own body diode: VGS = -2 V E = f(Tvj) VGS = -2/18 V, ID = 60 A, RG,ext = 2 Ω, VDD = 1200 V Typical switching energy as a function of drain current, test circuit in Fig. F, 2nd device own body diode: VGS = -2 V E = f(ID) VGS = -2/18 V, Tvj = 175 °C, RG,ext = 2 Ω, VDD = 1200 V 25 50 75 100 125 150 175 1000 2000 3000 4000 5000 6000 7000 0 10 20 30 40 50 60 70 80 90 2000 4000 6000 8000 10000 12000 IMYH200R012M1H CoolSiC™ 2000 V SiC Trench MOSFET Datasheet 10 Revision 1.10 2023-01-16
Typical switching energy losses as a function of gate resistance, test circuit in Fig. F, 2nd device own body diode: VGS = -2 V E = f(RG,ext) VGS = -2/18 V, ID = 60 A, Tvj = 175 °C, VDD = 1200 V Typical switching times as a function of gate resistance, test circuit in Fig. F, 2nd device own body diode: VGS = -2 V t = f(RG,ext) VGS = -2/18 V, ID = 60 A, Tvj = 175 °C, VDD = 1200 V 0 10 20 30 40 50 5000 10000 15000 20000 25000 30000 0 10 20 30 40 50 100 200 300 400 500 600 700 800 900 Typical reverse recovery charge as a function of reverse drain current slope, test circuit in Fig. F, 2nd device own body diode: VGS = -2 V Qfr = f(diSD/dt ) VGS = -2/18 V, ISD = 60 A, VDD = 1200 V Typical reverse recovery current as a function of reverse drain current slope, test circuit in Fig. F, 2nd device own body diode: VGS = -2 V Ifrm = f(diSD/dt ) VGS = -2/18 V, ISD = 60 A, VDD = 1200 V 0 500 1000 1500 2000 2500 3000 0.0 0.5 1.0 1.5 2.0 2.5 0 500 1000 1500 2000 2500 3000 IMYH200R012M1H CoolSiC™ 2000 V SiC Trench MOSFET Datasheet 11 Revision 1.10 2023-01-16
Typical switching energy losses as a function of dead time / blanking time, test circuit in Fig. F, 2nd device own body diode: VGS = -5 V E = f(tdead) ID = 60 A, Tvj = 175 °C, RG,ext = 2 Ω, VDD = 1200 V Max. transient thermal impedance (MOSFET/diode) Zth(j-c),max = f(tp) D = tp/T 100 120 1E-6 1E-5 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 IMYH200R012M1H CoolSiC™ 2000 V SiC Trench MOSFET Datasheet 12 Revision 1.10 2023-01-16
5 Package outlines
DIMENSIONS MIN. MAX. MILLIMETERS PG-TO247-4-U04 PACKAGE - GROUP NUMBER: c D A b 0.50 26.00 15.50 19.40 1.10 4.65 2.16 0.60 2.00 0.70 16.30 26.70 20.20 1.30 4.95 2.66 0.80 2.40 0.15 1.10 1.30 --- 0.50 7.62 e L K 5.00 1.75 14.30 2.60 7.00 3.00 2.25 14.90 U 9.00 9.50 2.79e1 aaa MIN. MAX.DIMENSIONS MILLIMETERS N 1.70 2.10 5.50 ØP 2.54--- D4 6.35 6.65 0.25 bbb 0.25 L1 5.40 5.70 12.00 12.80 E 15.60 16.00 L2 5.40 5.70 --- H 1.51 1.71 PG-TO247-4-PLUS-NT14 Figure 1 IMYH200R012M1H CoolSiC™ 2000 V SiC Trench MOSFET Datasheet 13 Revision 1.10 2023-01-16
6 Testing conditions
Figure A. Definition of switching times Figure C. Definition of switching losses Figure E. Thermal equivalent circuit ID(t) 1% ID t ID(t) 1% ID t VDS(t)VDS(t) t t1 t2 t3 t4 3% VDS3% VDS Eon = t3ʃt4VDS*ID*dt Eoff = t1ʃt2VDS*ID*dt VDS(t) t t1 t2 t3 t4 3% VDS Eon = t3ʃt4VDS*ID*dt Eoff = t1ʃt2VDS*ID*dt 90% VGS 10% VGS VGS(t) t 90% VGS 10% VGS VGS(t) t r2 r3r1 M =TC Tj(t) p(t) τ1/r1 τ2/r2 τn/rn r2 r3r1 M =TC Tj(t) p(t) τ1/r1 τ2/r2 τn/rn ton 90% td(on) tr 10%10%VGSVGS VDSVDS td(off)td(off) tftf tofftoffton 90% td(on) tr 10%VGS VDS td(off) tf toff I,V t tata tbtb QbQa I,V t VSD ISD Ifrm tfr ta tb diSD/dt 10% Ifrm tfr = ta + tb Qfr = Qa + Qb QbQa QG,totQGS,pl 97% VDS VDS t, Q Q QG,totQGS,pl QQGDGD Figure B. Definition of body diode switching characteristics V VGS GS, ,V VDS DS 97% VDS VGS = 18 V VDS t, Q Q VDD ½Lσ ½Lσ RG DUT Cσ L second device VGS(off) VDD ½Lσ ½Lσ RG DUT Cσ L second device VGS(off) Figure D. Definition of QGD Figure F. Dynamic test circuit Parasitic inductance Lσ, Parasitic capacitor Cσ, Figure 2 IMYH200R012M1H CoolSiC™ 2000 V SiC Trench MOSFET Datasheet 14 Revision 1.10 2023-01-16
Revision history
Document revision Date of release Description of changes 0.10 2022-03-08 Preliminary datasheet 1.00 2022-10-04 Final datasheet 1.01 2022-10-06 Editorial changes 1.10 2023-01-16 Change of picture on page 1 Change of product outline drawing on page 13 Editorial changes IMYH200R012M1H CoolSiC™ 2000 V SiC Trench MOSFET Datasheet 15 Revision 1.10 2023-01-16
All referenced product or service names and trademarks are the property of their respective owners. Edition 2023-01-16 Published by Infineon Technologies AG
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© 2023 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-ABD142-004 Important notice The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. Warnings Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.