IMX8 ROHM | Alldatasheet

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Rev.A 1/2 General purpose (dual transistors) IMX8 zFeatures 1) Two 2SC3906K chips in an SMT package. 2) High breakdown voltage. zPackage, marking, and packaging specifications IMX8 SMT6 T108 3000 Part No. Package Marking Code Basic ordering unit (pieces) zExternal dimensions (Unit : mm) ROHM : SMT6 EIAJ : SC-74 Each lead has same dimensions (6)(5)(4) 0.3Min. 0.15 0.3 1.1 0.8 0~0.1 (3) 2.8 1.6 1.9 2.9 0.95 (2) 0.95 (1) zEquivalent circuit (1)(2)(3) (4) Tr2 Tr1 (5) (6) zAbsolute maximum ratings (Ta=25°C) Parameter Symbol VCBO VCEO VEBO IC Pc Tj Tstg Limits 120 120 150 −55 to +150 Unit V V V mA mW ∗ 300(TOTAL) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Storage temperature ∗ 200mW per element must not be exceeded. zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO BVCEO BVEBO ICBO IEBO hFE 120 120 180 0.5 0.5 820 V V V µA µA Transition frequency fT − 140 − MHz IC=50µA IC=1mA IE=50µA VCB=100V VEB=4V VCE(sat) −− 0.5 V IC/IB=10mA/1mA VCE=6V, IC=2mA VCE=12V, IE= −2mA, f=100MHz ∗Transition frequency of the device Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage

Rev.A 2/2 zElectrical characteristics COLLECTOR CURRENT : IC (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Ground emitter output characteristics 4 8 12 16 200 IB=0µA 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 Ta=25°C COLLECTOR CURRENT : IC (mA) BASE TO EMITTER VOLTAGE : VBE (V) Fig.2 Ground emitter propagation characteristics 0.1 0.2 0.5 Ta=25°C VCE=6V COLLECTOR CURRENT : IC (mA) DC CURRENT GAIN : hFE Fig.3 DC current gain vs. collector current 0.2 0.5 12 5 10 20 50 100 200 500 Ta=25°C VCE=1V COLLECTOR OUTPUT CAPACITANCE : Cob(pF) Fig.7 Collector output capacitance vs. collector-base voltage −0.5 1 2 5 10 20 Ta=25°C f=1MHz IE=0A COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER INPUT CAPACITANCE : Cib(pF) EMITTER TO BASE VOLTAGE : VEB (V) Fig.8 Emitter input capacitance vs. emitter-base voltage −0.5 1 2 5 10 20 Ta=25°C f=1MHz IC=0A COLLECTOR CURRENT : IC (mA) COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) Fig.5 Collector-emitter saturation voltage vs. collector current ( ) 12 5 10 20 50 0.02 0.05 0.1 0.2 0.5 Ta=100°C 25°C −40°C IC/IB=10 COLLECTOR CURRENT : IE (mA) TRANSITION FREQUENCY : fT (MHz) Fig.6 Gain bandwidth product vs. emitter current 100 200 500 VCE=6V Ta=25°C COLLECTOR CURRENT : IC (mA) COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) Fig.4 Collector-emitter saturation voltage vs. collector current ( ) 12 5 10 20 50 0.02 0.05 0.1 0.2 0.5 Ta=25°C IC/IB=50

Appendix1-Rev1.1 The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.